Tutorials Manual

CHEMKIN 4.1.1
Table of Contents
3.1.2 Engine Exhaust Aftertreatment with a Transient Inlet Flow...............................................101
3.2 Parameter Studies.....................................................................................................................................108
3.2.1 Parameter Study Facility for Surface Chemistry Analysis .................................................108
3.3 Chemistry Sets...........................................................................................................................................112
3.3.1 Methane Oxidation on Pt.........................................................................................................112
3.3.2 Pt/Rh Three-way Catalyst .......................................................................................................113
4 Materials Problems ................................................................................................................................................115
4.1 Chemical Vapor Deposition......................................................................................................................115
4.1.1 Equilibrium Analysis of Chlorosilane CVD............................................................................116
4.1.2 PSR Analysis of Steady-state Thermal CVD .......................................................................118
4.1.3 Approximations for a Cylindrical Channel Flow...................................................................122
4.1.4 Deposition in a Rotating Disk Reactor ..................................................................................126
4.1.5 Trichlorosilane CVD in Planar Channel Flow Reactor........................................................131
4.2 Atomic Layer Deposition (ALD) ...............................................................................................................134
4.2.1 Time-dependent Simulations of ALD Process.....................................................................135
4.3 Plasma Etching ..........................................................................................................................................141
4.3.1 Steady-state Chlorine Plasma................................................................................................141
4.3.2 Spacial Chlorine Plasma PFR with Power Profile...............................................................145
4.3.3 Fluorocarbon Plasma Etching of Silicon Dioxide.................................................................149
4.4 Chemistry Sets...........................................................................................................................................154
4.4.1 Silicon Nitride CVD from Silicon Tetrafluoride and Ammonia ...........................................154
4.4.2 Silicon Deposition from Silane................................................................................................155
4.4.3 Silicon Deposition from Trichlorosilane.................................................................................155
4.4.4 Alumina ALD .............................................................................................................................156
4.4.5 Chlorine Plasma .......................................................................................................................158
4.4.6 Fluorocarbon Plasma with SiO 2 Etch Products...................................................................159
5 Chemical Mechanism Analysis ...........................................................................................................................161
5.1 Mechanism Analyzer.................................................................................................................................161
5.1.1 Background Information ..........................................................................................................162
5.1.2 Reaction Mechanism for Diamond CVD ...............................................................................164
Index ..........................................................................................................................................................................177
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