Tutorials Manual

More documents

Recommendations

Info

Chemkin 4.1.1 Chapter 4: Materials Problems Figure 4-18 Trichlorosilane CVD—Mole Fractions 4.2 Atomic Layer Deposition (ALD) The CHEMKIN software includes several reactor models that can be used for simulating ALD processes. ALD is a technique used to deposit thin films of solid materials in a very controlled manner, and differs from CVD primarily in that it is a transient process with the deposition surface being exposed to pulses of alternating gases. Ideally, the deposition chemistry in ALD is self-limiting, with growth occurring in a layer-by-layer manner and the deposition thickness being controlled only by the number of cycles. ALD is also called: ALE, Atomic Layer Epitaxy, NLD, Nano Layer Deposition, ALCVD, Atomic Layer Chemical Vapor Deposition, and AVD, Atomic Vapor Deposition. There are also plasma enhanced variations such as PENLD, Plasma Enhanced Nano Layer Deposition. It is a relatively new technology, having made the transition from the research lab to production in the last decade. The transient models within the CHEMKIN software are useful for optimizing pulse sequences and thus minimizing cycle times in ALD. The major advantage of ALD over CVD is the improved control over the deposition process and more conformal deposition. The inherently lower deposition rates, however, lead to longer process times and higher costs. During a pulse, it is important that enough molecules react with all parts of the substrate to be coated. But many of the precursor materials are expensive. Thus one of the process optimization goals is to reduce the amount of precursor that flows through the reactor but does not react at the surface. Considering the effects of finite-rate kinetics for surface reactions can be an important part of such an optimization, as reactions do not always behave in an ideal manner. © 2007 Reaction Design 134 RD0411-C20-000-001
Chapter 4: Materials Problems <strong>Tutorials</strong> <strong>Manual</strong> 4.2.1 Time-dependent Simulations of ALD Process 4.2.1.1 Project Description This user tutorial demonstrates two ways of simulating a time-dependent ALD process. The transient Perfectly Stirred Reactor Model runs relatively quickly and is useful for developing and initial testing of the chemical reaction mechanism. The transient stagnation flow model more realistically simulates a production-scale shower-head ALD reactor by including mass-transport effects. The alumina ALD chemistry described in Section 4.4.4 is used. The process operates at a pressure of 1 Torr, and a relatively low surface temperature (compared to CVD) of 450° C (723 K). This sample demonstrates four cycles of the flow sequence including: metalorganic precursor in argon; argon purge; ozone in oxygen and argon; and argon purge. The four cycles are sufficient, in this case, to characterize the process. 4.2.1.2 Project Setup This project file is an example that contains multiple reactor models or sub-projects. It is called multiple_models__atomic_layer_deposition.ckprj. The data files used for this sample are located in the samples\multiple_models\atomic_layer_deposition directory. The two reactor diagrams in this project each contain three gas inlets and either a Perfectly Stirred Reactor or a Stagnation-flow CVD Reactor Model. In this project, the names of the gas inlets, and their corresponding input panels, have been changed away from the default names of R1_IN1, etc, to METORG, OXIDIZER and PURGE, which reflect the function of the gas flowing through the inlets. The listings of flow rate as a function of time for each gas-flow inlet are saved as timedependent profile files: SCCMPRO_METORG.ckprf SCCMPRO_OXIDIZER.ckprf SCCMPRO_PURGE.ckprf In this case, the profiles of total flow rates for each gas inlet are in volumetric flow units of sccm, but flow profiles can also be specified in mass flow units. The PSR and stagnation-flow models use the same flow-profile files. Although both simulations run for the same length of process time, the stagnation flow simulation takes significantly more compute time to run, due to the inclusion of mass-transport effects. RD0411-C20-000-001 135 © 2007 Reaction Design
Page 1 and 2:
August 3, 2007 1:53 am Release 4.1.
Page 3 and 4:
Chemkin 4.1.1 Contents Table of Con
Page 5 and 6:
Chemkin 4.1.1 Tables List of Tables
Page 7 and 8:
Tutorials Manual 4.1.1 Figures List
Page 9 and 10:
List of Figures Tutorials Manual 2-
Page 11 and 12:
List of Figures Tutorials Manual 4-
Page 13 and 14:
Chemkin 4.1.1 1 1 Introduction The
Page 15 and 16:
Chapter 1: Introduction Tutorials M
Page 17 and 18:
Chemkin 4.1.1 2 2 Combustion in Gas
Page 19 and 20:
Chapter 2: Combustion in Gas-phase
Page 21 and 22:
Page 23 and 24:
Page 25 and 26:
Page 27 and 28:
Page 29 and 30:
Page 31 and 32:
Page 33 and 34:
Page 35 and 36:
Page 37 and 38:
Page 39 and 40:
Page 41 and 42:
Page 43 and 44:
Page 45 and 46:
Page 47 and 48:
Page 49 and 50:
Page 51 and 52:
Page 53 and 54:
Page 55 and 56:
Page 57 and 58:
Page 59 and 60:
Page 61 and 62:
Page 63 and 64:
Page 65 and 66:
Page 67 and 68:
Page 69 and 70:
Page 71 and 72:
Page 73 and 74:
Page 75 and 76:
Page 77 and 78:
Page 79 and 80:
Page 81 and 82:
Page 83 and 84: Chapter 2: Combustion in Gas-phase
Page 91 and 92: Chemkin 4.1.1 3 3 Catalytic Process
Page 93 and 94: Chapter 3: Catalytic Processes Tuto
Page 115 and 116: Chemkin 4.1.1 4 4 Materials Problem
Page 117 and 118: Chapter 4: Materials Problems Tutor
Page 133: Chapter 4: Materials Problems Tutor
Page 161 and 162: Chemkin 4.1.1 5 5 Chemical Mechanis
Page 163 and 164: Chapter 5: Chemical Mechanism Analy
Page 177 and 178: Tutorials Manual 4.1.1 Index Index
Page 179 and 180: Index Tutorials Manual normalized s
show all

Tutorials Manual

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?