OP-II-3

PP-III-15PARTIAL OXIDATION OF METHANE TO SYNTHESIS GAS OVERPOROUS NICKEL BASED CATALYSTSDanilova M.M., Fedorova Z.A., Kirillov V.A., Zaikovskii V.I., Kuzin N.A.,Kuzmin V.A., Krieger T.A.Boreskov Institute of Catalysis SB RAS, Novosibirsk, Russiae-mail: Sabirova@catalysis.ruThe catalytic process of the partial oxidation of methane (POM) to synthesis gas is nowconsidered as a promising way for producing synthesis gas. POM is accompanied by thedeep CH 4 oxidation to CO 2 and H 2 O with a considerable heat release. The use of heatconductingcatalysts will aid in diminishing the temperature gradients, local overheatings,and sintering of the active component. To afford high conductivity of the catalysts, it isreasonable to use the metallic supports. In this work, we studied the catalytic properties ofthe nickel catalysts supported on porous nickel with MgO precoat in the reaction of POM tothe synthesis gas and also tested the developed catalysts in reactor of partial oxidation ofmethane to synthesis gas for solid oxide fuel cell.The developed catalysts contained 5 wt.% MgO and 3-5 wt.% Ni supported on porousnickel. The catalysts were characterized by XRD, low-temperature adsorption of nitrogen,SEM and TEMHR in combination with EDX analysis. Catalytic activity in the POM wasdetermined by a flow method (quartz reactor, 1 atm, 800°С, natural gas-22 vol.%, air-78vol.%, O 2 /C = 0,65, feed rate of the reaction mixture - 51,0 l/h, m cat =0,40 g). Prior to testingthe catalysts were reduced at 800-900°С for 1 hour in Н 2 flow.Figure 1 shows the effect of duration of the POM reaction (100 h) on the СН 4conversion and the selectivity for СО and Н 2 on supported nickel catalysts. The CH 4conversion decreased by no more than 15-25 rel. %. The selectivity for CO and H 2 showeda slightly decrease. The most stable activity was observed for the sample reduced at 900°С.a bFig. 1. CH 4 conversion (▲) and selectivity for СО (■) and Н 2 (●) versus time on stream in thePOM over catalyst 3.0 % Ni/rpNi + 5.0 % MgO, reduced in Н 2 : a - at 800°С, b – at 900°С.466