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Prospects of Colloidal Nanocrystals for Electronic - Computer Science

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<strong>Colloidal</strong> <strong>Nanocrystals</strong> in <strong>Electronic</strong> Applications Chemical Reviews, 2010, Vol. 110, No. 1 407<br />

Figure 18. Low-temperature resistance (R) <strong>of</strong> a layer <strong>of</strong> 5 nm Au<br />

NCs linked by HS(CH2)nSH molecules with various n. The<br />

resistances are normalized to their respective values at 200 K. Inset:<br />

R <strong>of</strong> the samples at 200 K as a function <strong>of</strong> n. Reprinted with<br />

permission from ref 260. Copyright 2006 American Institute <strong>of</strong><br />

Physics.<br />

19b-d). Correspondingly, the electrical conductivity increased<br />

by ∼11 orders <strong>of</strong> magnitude, and the material<br />

converted from highly insulating (Figure 19e) to metallic273 (Figure 19f). In the case <strong>of</strong> CdSe NCs capped by Sn2S6 4-<br />

Figure 19. Conductivity <strong>of</strong> 5 nm Au nanocrystals stabilized by<br />

Sn2S6<br />

ions, the delocalization <strong>of</strong> electron and hole wave functions<br />

manifested itself through the red shift <strong>of</strong> excitonic transitions<br />

in the optical absorption spectra.<br />

4- . (A) Sketch <strong>of</strong> Au nanocrystal capped with Sn2S6 4- ions.<br />

(B) TEM image <strong>of</strong> Au nanocrystals capped with dodecanethiol.<br />

(C,D) TEM images <strong>of</strong> 2D and 3D superlattices <strong>for</strong>med by Au<br />

nanocrystals capped with Sn2S6 4- . (E) I-V scan <strong>for</strong> ∼200 nm thick<br />

film <strong>of</strong> dodecanethiol-capped Au nanocrystals. (F) I-V scan <strong>for</strong><br />

∼200 nm thick films <strong>of</strong> Au nanocrystals stabilized with Sn2S6 4- .<br />

Adapted with permission from ref 273. Copyright 2009 American<br />

Association <strong>for</strong> Advancement <strong>of</strong> <strong>Science</strong>.<br />

5.3. Effects <strong>of</strong> <strong>Electronic</strong> and Structural Disorder<br />

Disorder (∆R) is the other key player in the electronic<br />

properties <strong>of</strong> NC solids. Because the NCs are not atomically<br />

defined objects, there is always a finite dispersion in their<br />

size and shape. Advanced synthetic techniques allow <strong>for</strong><br />

dispersion within a single atomic layer, 30,326 which still leads<br />

to a standard deviation <strong>of</strong> several percent. Size distribution<br />

results in the finite dispersion <strong>of</strong> the orbital energies (R) <strong>of</strong><br />

individual particles. The energies <strong>of</strong> occupied and unoccupied<br />

states in semiconductor quantum dots, scale approximately<br />

as 1/r2 , 318,319 leading to ∆R/R ≈ 2∆r/r dispersion in site<br />

energies due to quantum confinement. Electron transfer<br />

between two NCs is the most efficient when their energies<br />

Figure 20. The temperature dependence <strong>of</strong> the experimentally<br />

determined low-bias resistance <strong>for</strong> 7 nm Ag nanoparticle monolayer<br />

films with different amount <strong>of</strong> disorder originating from the particle<br />

size distribution. Reprinted with permission from ref 328. Copyright<br />

2002 American Association <strong>for</strong> Advancement <strong>of</strong> <strong>Science</strong>.<br />

are equal (the conditions <strong>of</strong> resonant tunneling); otherwise,<br />

phonons have to be absorbed or emitted during the transition.<br />

The transition rate drops quickly with increasing disorder,<br />

320,327,328 pointing to the importance <strong>of</strong> narrow size and<br />

shape distribution <strong>of</strong> individual NCs. The interplay <strong>of</strong><br />

exchange coupling energy � and disorder ∆R defines an<br />

important type <strong>of</strong> metal-insulator transition called Anderson<br />

localization. 315,319 If � is larger than ∆R, the coupling is<br />

sufficiently strong to overcome the dispersion in the energy<br />

levels <strong>of</strong> the individual NCs, and extended wave functions<br />

still can exist. In the opposite case, the system breaks into<br />

small isolated regions where strong coupling prevails,<br />

separated by weakly conducting regions. Heath et al.<br />

observed a dramatic effect <strong>of</strong> size distribution on charge<br />

transport in arrays <strong>of</strong> Ag NCs; the conductivity <strong>of</strong> the NC<br />

monolayers changed over several orders <strong>of</strong> magnitude upon<br />

rather small change <strong>of</strong> ∆R as shown in Figure 20.<br />

Another type <strong>of</strong> disorder very typical <strong>for</strong> NC solids is the<br />

disorder in NC packing that leads to variation <strong>of</strong> spacing<br />

between neighboring NCs. Here, long-range ordered NC<br />

assemblies can have significant advantage over disordered<br />

glassy films. Remacle and Levine 318 and Beloborodov et al. 314<br />

presented a detailed theoretical framework <strong>for</strong> the interplay<br />

<strong>of</strong> ∆R, �, and Ec and their effect on the transport characteristics<br />

<strong>of</strong> NC solids; an outline <strong>of</strong> the trends is schematically<br />

shown in Figure 21.<br />

5.4. Conduction Mechanisms: Hopping, VRH,<br />

ES-VRH, Cotunneling, Bloch Transport<br />

Important in<strong>for</strong>mation on the mechanism <strong>of</strong> charge<br />

transport can be obtained from the effect <strong>of</strong> temperature on<br />

conductivity (G) <strong>of</strong> NC solids. Typical temperature dependences<br />

<strong>for</strong> conductivity <strong>of</strong> monolayer thick films <strong>of</strong> metal NCs<br />

are shown in Figure 20. At high temperatures (>200 K),<br />

close-packed layers <strong>of</strong> monodisperse metal NC can exhibit<br />

an increase in resistance with increasing temperature, the<br />

behavior typical <strong>for</strong> metals. 328 At lower temperatures, the<br />

carriers are localized on individual NCs and transport occurs<br />

by sequential tunneling; the electron hops from a particle to<br />

its nearest neighbor along the current path. Arrhenius type<br />

temperature dependence <strong>of</strong> conductivity log(G) ∼ 1/T is<br />

characteristic <strong>of</strong> this transport regime. At even lower<br />

temperatures, below ∼60 K the conductivity <strong>of</strong> Au and Ag<br />

NC layers scales as log(G) ∼ 1/T 1/2 . 328,329 Tran et al.<br />

explained such behavior by inelastic cotunneling transport<br />

mechanism dominated by cooperative, multielectron hops

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