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Prospects of Colloidal Nanocrystals for Electronic - Computer Science

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418 Chemical Reviews, 2010, Vol. 110, No. 1 Talapin et al.<br />

Among the benefits provided by this class <strong>of</strong> electronic<br />

materials, there are properties inherent to nanoscale materials<br />

such as size-dependent electronic structure, charging energy,<br />

melting temperature, and other parameters that can be finetuned<br />

by varying NC size. For example, superior luminescent<br />

properties <strong>of</strong> semiconductor NCs (size-tunable color, narrow<br />

emission band, almost 100% luminescence quantum efficiency,<br />

high stability, etc.) have been utilized in lightemitting<br />

devices (LEDs).<br />

In addition, colloidal NCs <strong>of</strong>fer opportunities <strong>for</strong> inexpensive<br />

device fabrication by solution-based techniques like<br />

spin-coating, dip-coating, inkjet printing, etc., and can be<br />

used in roll-to-roll processing. As a result, colloidal NCs<br />

are condidered as a very promising class <strong>of</strong> materials <strong>for</strong><br />

large area applications, such as thin film solar cells and <strong>for</strong><br />

the applications where low fabrication cost is very important.<br />

Along these lines, solution-cast NC field-effect transistors<br />

(FETs) show respectable carrier mobilities, which compare<br />

favorably to the best devices made from organic electronic<br />

materials. 23,24,87,386,393 Several interesting concepts have been<br />

proposed <strong>for</strong> NC-based solar cells. 271,394-397 The progress in<br />

developments <strong>of</strong> commercially successful NC devices requires<br />

collaborative ef<strong>for</strong>ts <strong>of</strong> chemists synthesizing new<br />

materials, scientists studying materials properties, engineers<br />

working on device architecture, and technologists involved<br />

in the process <strong>of</strong> device fabrication. In this section, we<br />

provide an overview <strong>of</strong> state-<strong>of</strong>-the-art <strong>for</strong> several classes<br />

<strong>of</strong> applications utilizing colloidal NCs.<br />

7.1. Light-Emitting Devices (LEDs)<br />

<strong>Colloidal</strong> NCs have been explored as the emitters <strong>for</strong> thin<br />

film light-emitting diodes (LEDs). 398-407 In a typical LED,<br />

a thin layer <strong>of</strong> light-emitting NCs, <strong>for</strong> example, CdSe/ZnS<br />

core-shells or Cd1-xZnxSe (recombination layer), is sandwiched<br />

between the hole transport layer (HTL) and electron<br />

transport layer (ETL), which provide injection <strong>of</strong> carriers<br />

into the NCs (Figure 34). The per<strong>for</strong>mance <strong>of</strong> NCs-based<br />

LEDs has remarkably improved over the past decade. 404,408,409<br />

Among the strong points <strong>of</strong> NC-based LEDs are their high<br />

color purity (i.e., narrow emission band) and tunability <strong>of</strong><br />

the emission color from UV to near-IR by simply varying<br />

the NC size. 410 Because size-dependent emission <strong>of</strong> semiconductor<br />

NCs is well described by the quantum dot (QD)<br />

<strong>for</strong>malism, the NC-based LEDs are <strong>of</strong>ten named “QD-<br />

LEDs”. To be fully competitive with other emerging<br />

Figure 34. Schematic diagram and a typical structure <strong>of</strong> a thin<br />

film LED utilizing semiconductor NCs.<br />

technologies such as organic LEDs, both brightness and<br />

especially lifetime <strong>of</strong> QD-LEDs have to be considerably<br />

improved. 411 The room <strong>for</strong> such improvements is associated<br />

with the higher stability <strong>of</strong> core-shell NCs and electronand<br />

hole-transport layers, better understanding and controlling<br />

chemical and physical phenomena at the NC-organics<br />

interfaces, optimization <strong>of</strong> the energy transfer, and carrier<br />

injection from organic molecules into the NCs. In this<br />

section, we introduce the basic principles <strong>of</strong> QD-LED<br />

operation and review recent progress in NC-based LEDs.<br />

7.1.1. LED Per<strong>for</strong>mance Characteristics<br />

Internal Quantum Efficiency (ηint). Not every electron–<br />

hole pair injected into LED recombines radiatively. Nonequilibrium<br />

carriers can recombine radiatively or nonradiatively<br />

depending on the available local recombination pathways. The<br />

internal quantum efficiency (ηint) can be expressed as<br />

ηint )<br />

(number <strong>of</strong> photons generated per second)<br />

(number <strong>of</strong> electrons injected into LED per second) )<br />

(Pint /hν)<br />

(26)<br />

(I/e)<br />

where Pint is the optical power emitted from the active region,<br />

and I is the injection current.<br />

Light Extraction Efficiency (ηextraction). Photons emitted<br />

by the active region should escape from the LED. In an ideal<br />

LED, all photons emitted by the active region are emitted<br />

into free space. However, in a real device, not all emitted<br />

photons can escape due to reabsorption or internal reflections.<br />

The light extraction efficiency is defined as<br />

η extraction )<br />

(number <strong>of</strong> photons emitted into free space per second)<br />

(number <strong>of</strong> photons generated per second)<br />

where P is the optical power emitted into free space.<br />

External Quantum Efficiency (ηext). A very important<br />

metric <strong>of</strong> an LED is the external quantum efficiency, which<br />

is the ratio <strong>of</strong> the number <strong>of</strong> photons emitted into free space<br />

to the number <strong>of</strong> injected carriers. ηext can be defined as<br />

The power efficiency is defined as<br />

(P/hν)<br />

(P int /hν)<br />

where I is the current flowing through the LED and V is the<br />

applied voltage. The power efficiency is comparable with<br />

ηexternal only if the device operational voltage is approximately<br />

equal to the energy gap <strong>of</strong> semiconductor. 411<br />

Eye Sensitivity and Brightness. The physical properties<br />

such as the number <strong>of</strong> photons, photon energy, and optical<br />

)<br />

(27)<br />

η ext )<br />

(number <strong>of</strong> emitted photons per second)<br />

(number <strong>of</strong> electrons injected into LED per second) )<br />

(P/hν)<br />

(I/e) ) η int × η extraction (28)<br />

η power ) P<br />

IV )<br />

number <strong>of</strong> photons emitted externally × hν<br />

IV<br />

(29)

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