Noncontact Atomic Force Microscopy - Yale School of Engineering ...
Noncontact Atomic Force Microscopy - Yale School of Engineering ...
Noncontact Atomic Force Microscopy - Yale School of Engineering ...
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Simultaneous measurement <strong>of</strong> force and tunneling current<br />
Tu-1200<br />
Daisuke Sawada, Yoshiaki Sugimoto, Ken-ichi Morita, Masayuki Abe, and Seizo Morita<br />
Graduate school <strong>of</strong> <strong>Engineering</strong>, Osaka University, Osaka, Japan<br />
We have performed simultaneous STM and AFM measurements in the dynamic mode<br />
using Pt-Ir coated Si cantilevers at room temperature. Frequency shift (Δf) and timeaverage<br />
tunneling current () images were obtained by tip scanning on the Si(111)-<br />
(7×7) surface at constant height mode to prevent a crosstalk between these two channels<br />
[Fig.1 (a)]. To compensate the thermal drift <strong>of</strong> the tip-surface distance, feed forward<br />
technique was applied [1]. Analysis <strong>of</strong> 25 sets <strong>of</strong> AFM/STM images using different tips<br />
shows that when atomic resolution is obtained simultaneously by both AFM and STM,<br />
the tunneling current is much larger than the typical values in conventional STM. We<br />
have also performed simultaneous measurements <strong>of</strong> site-specific force/tunneling<br />
spectroscopy. The Δf and versus tip-surface distance curves were converted into the<br />
short-range force (FSR) and the tunneling current (It) at closest separation between the<br />
sample surface and the oscillating tip [Fig.1 (b)]. We observed the drop in the tunneling<br />
current due to the chemical interaction between the tip apex atom and the surface adatom,<br />
which was found recently [2], and estimated the value <strong>of</strong> the chemical bonding force.<br />
Furthermore, scanning tunneling spectroscopy (STS) was performed on the same site<br />
using the same tip [Fig.1 (c)]. The spectrum is in good agreement with previous STM<br />
results. Our results demonstrate that one can quantitatively measure the local density <strong>of</strong><br />
state and the chemical bonding force above the same atom using the same tip [3].<br />
Figure 1: (a) Δf and images <strong>of</strong> a Si(111)-(7×7) surface simultaneously obtained in the<br />
constant height mode at room temperature. The acquisition parameters are f0=284092.5 Hz,<br />
A=300 Å, k=22.9 N/m, and Vs=-400 mV respectively. (b) It-z and FSR-z curves derived from z<br />
and Δf-z curves obtained above a center adatom in a faulted half unit cell, respectively. (c) STS<br />
spectrum and Δf - Vs curves obtained at z=4.4 Å.<br />
[1] M. Abe, et al., Appl. Phys. Lett. 90, 203103 (2007).<br />
[2] P. Jelinek, M. Svec, P. Pou, R. Perez, and V. Chab, Phys. Rev. Lett. 101, 176101 (2008).<br />
[3] D. Sawada, Y. Sugimoto, K. Morita, M. Abe, and S. Morita, Appl. Phys. Lett. in press.<br />
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