Proceedings - Viện Vật lý

Advances _________________________________________________________________________________in Optics, Photonics, Spectroscopy and Applications. Aug. 2006, Cantho, Vietnamscenario is to hold external stresses responsible for defect creation [9]. Under suchcircumstances, even strain thresholds were observed in the process of defectcreation, i.e. a non-linear behavior. Our present results show that different straindefect-relationshipscan coexist if different defects are created simultaneously bydevice operation.4. ConclusionsWe have presented optical techniques, namely PC, LBIC and NOBIC toinvestigate defects in HPLDs. Beside that some complementary measurements, e.g.EL and CL had been done to clarify the results. By these methods, we can studydefects and their properties such as localization, evolution or interplay with othercharacteristics. The particular results show: distributions of defects along HPLDarrays, the evolution of defects during device operation, the localization of defectswithin waveguides of high power red-emitting lasers, and the interplay betweendefects and packaging induced strain in cm-bar HPLD arrays. Another aspect of thispaper is discussion about methodology. LBIC technique demonstrates quickefficient screening tool with potential for predicting of device failure. Nevertheless,more detail information for understanding of defect nature only achieve by PCmeasurement with spectral and spatial resolved. An optimum method must bechosen via requirements of study goal. This type of all-optical analysis can also beextended to other semiconductor devices.AcknowledgementThis work was partly funded by European Union within projects POWERPACK andWWW. BRIGHT.EU contracts IST-2000-29447 and 511 722 respectively.References1. A. Knigge, G. Erbert, J. Jönsson, W. Pittroff, R. Staske, B. Sumpf, M. Weyers, G.Tränkle, Electron. Lett. 5, 250 (2005)2. T. Q. Tien, A. Gerhardt, S. Schwirzke-Schaaf, J. W. Tomm, M. Pommiès, M. Avella,J. Jiménez, M. Oudart, J. Nagle, Appl. Phys. Lett. 87, 211110 (2005).3. C. Ropers, T. Q. Tien, C. Lienau, J. W. Tomm, P. Brick, N. Linder, B. Mayer, M.Müller, S. Tautz, W. Schmid, Appl. Phys. Lett. 88. 133513 (2006).4. J. W. Tomm, A. Bärwolff, A. Jaeger, T. Elsaesser, J. Bollmann, W. T. Masselink, A.Gerhard, J. Donecker, J. Appl. Phys. 84, 1325 (1998).5. A. Richter, J.W. Tomm, C. Lienau and J. Luft, Appl. Phys. Lett. 69, 3981 (1996)6. M. Pommiès, M. Avella, G. Patriarche, M. Bettiati, G. Hallais, J. Jiménez, Eur. Phys.J: Appl. Phys. 27, 465 (2004).7. M. Pommiès, M. Avella, E. Canovas, J. Jiménez, T. Fillardet, M. Oudart, J. Nagle,Appl. Phys. Lett. 86, 131103 (2005).8. J. W. Tomm, R. Müller, A. Bärwolff, T. Elsaesser, D. Lorenzen, F. X. Daiminger, A.Gerhardt, and J. Donecker, Appl. Phys. Lett. 73, 3908-3910 (1998).9. T. Q. Tien, J. W. Tomm, M. Oudart, J. Nagle, Appl. Phys. Lett. 86, 111908 (2005).10. M. L. Biermann, S. Duran, K. Peterson, A. Gerhardt, J. W. Tomm, W. Trzeciakowski,A. Bercha, J. Appl. Phys. 96, 4056-4065 (2004).297