Proceedings - Viện Vật lý

Advances _________________________________________________________________________________in Optics, Photonics, Spectroscopy and Applications. Aug. 2006, Cantho, VietnamTài liệu tham khảo1. P.T.Tâm, T.K.Hiếu, N.T.N.Hà, "Mô phỏng phân giải pha phổ quang phản xạ của InPvà cấu trúc đa lớp dị thể Ga 1-x Al x As/GaAs/GaAs", KLTN, ĐH KHTN, Tp.HCM,(2006).2. T.K.Hiếu, L.H.Vũ, H.S.Hoàng, etc.. “Thiết lập hệ đo quang bán dẫn trên cơ sở phầnmềm LabView có tích hợp module xử lý tín hiệụ”, Hội nghị Vật lý toàn quốc lần VI,Hà Nội (2005).3. J.Singh, “Semiconductor Optoelectronics”, McGraw Hill International Editions,(1995).4. Kenneth A.Jones, “Optoelectronik”, VCH – Weinheim (1992).PHOTOLUMINESCENCE AND PHOTOREFLECTANCEINVESTIGATIONS OF HETEROJUNCTION STRUCTURESGa 1-x Al x As(n + )/GaAs(p - )/GaAs(p + )Huynh Sa Hoang , Truong Kim Hieu, Le Hong Vu, Vuong Trung Kien.University of Natural Sciences -VNU-HCM227 Nguyen Van Cu Street, 5 District, Ho Chi Minh CityAbstract: A important substrate that is available for light emitting technology is GaAs.Important semiconductor materials exploited in optoelectronics are the Al x Ga 1-x As alloyswhich are lattice matched very well to GaAs substrates. In this report, we declare someresults of Photoluminescence (PL) and Photoreflectance (PR) - a powerful tool for theinvestigation of surface states and other characteristic properties of heterostructures [1].Our optical system placed in front of the monochromator has a scalable and tidinessstructure. Collecting and processing data are automatically controlled by the PC. Thecontrolled-program has a simple and easy used GUI (graphic user interface) that is writtenby G language supported by LABVIEW [2]. We used this system to get the PL (Fig.1) andPR (Fig.2) spectra of GaAs and specially on the heterostructures Al x Ga 1-x As(n + )/GaAs(p -)/GaAs(p + ).511