Proceedings - Viện Vật lý

Advances _________________________________________________________________________________in Optics, Photonics, Spectroscopy and Applications. Aug. 2006, Cantho, Vietnamtại các mức năng lượng này có thể được giải thích do chuyển mức tái hợp bức xạnày đều có nguồn gốc liên quan đến các sai hỏng mạng trong dây nano.Tài liệu tham khảo1. S. A. Hooker, The nanoparticle 2002 Conference proceedings 1- 4.2. T. M. Racheva, G. W. Critchlow, Thin Solid films 292 (1997)299 - 3023. S. H. Sun, G. W. Meng, Y. W Wang, T. Gao, M. G. Zhang, Y. T. Tian, X. S. Peng, L.D. Zhang, Appl. Phys. A 76, (2003) 287 – 289.4. Z. R. Dai, Z. W. Pan, Z. L. Wang, Solid state communications 118 (2001) 351 - 3545. Yiqing Chen, Xuefeng Cui, Kun Zhang, Dengyu Pan, Shuyuan Zhang, Bing wang, J.G. Hou, Chemical Physics Letters 369 (2003) 16 – 20.6. F.Gu, S.F.Ưang, C.F.Song, M.K.Lu, Y. X.Qi, G.J. Zhou, D. Xu, D.R. Yan, Chem.Phys. Lett.372, (2003), 451- 4547. J. Q. Hu, XL. Ma, N.G. Shang, Z.Y. Xie, N. B. Wong, C. S. Lê and S. T. Lê, J. Phys.Chem. B (2002), 106, 3823-3826LUMINESCENT PROPERTIES OF SnO 2 NANOWIRES PREPAREDBY THERMAL EVAPORATIONLe Duy Khanh, Nguyen Thanh Binh, Le Thi Thanh Binh, Nguyen Ngoc LongFaculty of Physics, Ha Noi University of Science334 Nguyen Trai Str., Thanh Xuan, Ha Noi, Viet NamAbstract: SnO 2 nanostructures thin films were received by thermal evaporation at 1000ºC÷ 1400ºC from SnO 2 powder and Sn grain mixing with graphite, initial material was mixedby the ratio varied from 1:12 to 1:5. The films are polycrystalline in nature withtetragonal crystal structure. Photoluminescence and excitation photoluminescencespectra of the films with SnO 2 nanostructures were investigated in the temperature range of14K ÷ 300K. The photoluminescence peaks were observed at 370 nm, 375 nm, 387 nm and478 nm. The excitation photoluminescence were observed at 275 nm and 365 nm.89