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480 4. Appendix<br />

4.3.3 MOS Field-Effect Transistor<br />

syntax<br />

{Mname, {n −>D, n −>G, n −>S, n −>B}, Model−>MOSFET, Selector−>selector, parameters}<br />

denotes a subcircuit reference for a MOSFET<br />

Subcircuit reference for MOSFET.<br />

D<br />

D<br />

G<br />

B<br />

G<br />

B<br />

S<br />

S<br />

Valid values for selector are: Spice, SpiceDC, SpiceAC, and SpiceNoise. Possible parameters are<br />

described below.<br />

Large-Signal Model<br />

The analog behavioral model included in the Analog Insydes model library has the following port<br />

characteristics:<br />

D<br />

Voltage[D,B]<br />

Current[D,B]<br />

Voltage[G,B]<br />

G<br />

Current[G,B]<br />

S<br />

B<br />

Voltage[S,B]<br />

Current[S,B]<br />

where G denotes the Gate, D the Drain, S the Source, and B the Bulk, respectively. The port currents<br />

can be expressed in the port variables as follows:<br />

Gate:<br />

Drain:<br />

Source:<br />

Bulk:<br />

i G t ⩵ Current[G,B]t<br />

i D t ⩵ Current[D,B]t<br />

i S t ⩵ Current[S,B]t<br />

i B t ⩵ Current[G,B]t Current[D,B]t Current[S,B]t

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