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Therefore:
T
C1o R T R T
R R
Substituting Eq. (3.30) into Eq. (3.28) gives:
T
C1i C1cyl C1o C1i C1cyl C1o 1 1 T T
R R R R R R
1 w
( ) ( )
C1i C1cyl C1o C1i C1cyl C1o 50
(3.30)
(3.31)
TC1i will be used to determine water and wall 1 interface film temperature and water
properties on this surface which are temperature dependent. TC1i will also be used to
calculate the heat flow rate through wall 1 inner surface. Due to the high thermal
conductivity and thickness of the wall, the difference between C1i significant. To simplify the computation, C1i T and TC1o is not
T is used to replace TC1o in outer surface
resistance calculation. Resistances in this equation can be determined as follows.
The conductive resistance through the cylindrical wall R C1cyl can be written as [47]:
R
r
C1o ln( )
rC
1i
C1cyl (3.32)
2
lC1ikC The Sparrow and Gregg’s criterion is also satisfied for both wall 1 inner surface and
outer surface. Thus Eq. (3.23) is also applied here.
Now C1i R , RC1o and 1
R C cyl are all determined and C1i T now can be calculated by Eq.(3.31).
3.3.3 Heat transfer from the chamber water into chamber air wa Q
Heat transfer rate from the water to the chamber air is:
T T
w Cai
wa
(3.33)
Rws
Q
Where TCai is the chamber inlet air temperature. When airflow is from ADU to the
chamber, TCai depends on ambient air temperature and humidity also on enthalpy gain