Single-Chip Low Cost Low Power RF-Transceiver (Rev. A)

CC25004.3 RF Transmit SectionTc = 25°C, VDD = 3.0 V, 0 dBm if nothing else stated. All measurement results obtained using the CC2500EM referencedesign.Parameter Min Typ Max Unit Condition/NoteDifferential loadimpedanceOutput power,highest settingOutput power,lowest settingSpurious emissions25 MHz – 1 GHz47-74, 87.5-118, 174-230, 470-862 MHz1800-1900 MHzAt 2·RF and 3·RFOtherwise above 1GHz80 + j74 Ω Differential impedance as seen from the RF-port (RF_P andRF_N) towards the antenna. Follow the CC2500EMreference design available from the TI and Chipconwebsites.0 dBm Output power is programmable and is available across theentire frequency band.Delivered to a 50 Ω single-ended load via CC2500EMreference design RF matching network.–30 dBm Output power is programmable and is available across theentire frequency band.–36–54–47–41–30dBmdBmdBmdBmdBmDelivered to a 50 Ω single-ended load via CC2500EMreference design RF matching network.Restricted band in EuropeRestricted bands in USATable 6: RF transmit parameters4.4 Crystal OscillatorTc = 25°C, VDD = 3.0 V if nothing else stated.Parameter Min Typ Max Unit Condition/NoteCrystal frequency 26 26 27 MHzTolerance ±40 ppm This is the total tolerance including a) initial tolerance, b) crystalloading, c) aging and d) temperature dependence.The acceptable crystal tolerance depends on RF frequency andchannel spacing / bandwidth.ESR 100 ΩStart-up time 300 µs Measured on CC2500EM reference design.Table 7: Crystal oscillator parametersPRELIMINARY Data Sheet (Rev.1.2) SWRS040A Page 10 of 83