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MC9S12VR-Family - Data Sheet - Freescale Semiconductor

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64 KByte Flash Module (S12FTMRG64K512V1)<br />

0x08 Erase All Blocks<br />

0x09 Erase Flash Block<br />

0x0B Unsecure Flash<br />

0x0D<br />

0x0E<br />

0x10<br />

0x11<br />

0x12<br />

Set User Margin<br />

Level<br />

Set Field Margin<br />

Level<br />

Erase Verify<br />

EEPROM Section<br />

Program<br />

EEPROM<br />

Erase EEPROM<br />

Sector<br />

Erase all EEPROM (and P-Flash) blocks.<br />

An erase of all Flash blocks is only possible when the FPLDIS, FPHDIS, and FPOPEN<br />

bits in the FPROT register and the DPOPEN bit in the EEPROT register are set prior to<br />

launching the command.<br />

Erase a EEPROM (or P-Flash) block.<br />

An erase of the full EEPROM block is only possible when DPOPEN bit in the EEPROT<br />

register is set prior to launching the command.<br />

Supports a method of releasing MCU security by erasing all EEPROM (and P-Flash)<br />

blocks and verifying that all EEPROM (and P-Flash) blocks are erased.<br />

Specifies a user margin read level for the EEPROM block.<br />

Specifies a field margin read level for the EEPROM block (special modes only).<br />

Verify that a given number of words starting at the address provided are erased.<br />

Program up to four words in the EEPROM block.<br />

Erase all bytes in a sector of the EEPROM block.<br />

17.4.5 Allowed Simultaneous P-Flash and EEPROM Operations<br />

Only the operations marked ‘OK’ in Table 17-29 are permitted to be run simultaneously on the Program<br />

Flash and <strong>Data</strong> Flash blocks. Some operations cannot be executed simultaneously because certain<br />

hardware resources are shared by the two memories. The priority has been placed on permitting Program<br />

Flash reads while program and erase operations execute on the <strong>Data</strong> Flash, providing read (P-Flash) while<br />

write (EEPROM) functionality.<br />

Table 17-29. Allowed P-Flash and EEPROM Simultaneous Operations<br />

Program Flash Read<br />

<strong>Data</strong> Flash<br />

Margin<br />

Read 1 Program Sector<br />

Erase<br />

Read OK OK OK<br />

Margin Read 1<br />

Program<br />

Sector Erase<br />

Mass Erase 2<br />

Table 17-28. EEPROM Commands<br />

FCMD Command Function on EEPROM Memory<br />

<strong>MC9S12VR</strong> <strong>Family</strong> Reference Manual, Rev. 2.8<br />

Mass<br />

Erase 2<br />

1 A ‘Margin Read’ is any read after executing the margin setting commands<br />

‘Set User Margin Level’ or ‘Set Field Margin Level’ with anything but the<br />

‘normal’ level specified. See the Note on margin settings in Section 17.4.6.12<br />

and Section 17.4.6.13.<br />

2 The ‘Mass Erase’ operations are commands ‘Erase All Blocks’ and ‘Erase<br />

Flash Block’<br />

488 <strong>Freescale</strong> <strong>Semiconductor</strong><br />

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