MC9S12VR-Family - Data Sheet - Freescale Semiconductor

HSDRV Electrical Specifications
4 P High-Load Resistance Open-Load Detection Current
(if High-side driver is enabled and gate turned off)
5 T Leakage Current -40˚C < T J < 80˚C
Leakage Current 80˚C < T J< 150˚C
1 TJ: Junction Temperature
2 TA: Ambient Temperature
Open Load Detection disabled.
(0V < V PHS0/1 < V SUP_HS)
D.3 Dynamic Characteristics
MC9S12VR Family Reference Manual, Rev. 2.8
I HLROLDC – 40 – µA
I LEAK_L
I LEAK_H
Table D-3. Dynamic Characteristics - HSDRV
Characteristics noted under conditions 7V ≤ VSUPHS ≤ 18 V, -40˚C ≤ T J ≤ 150˚C 1 unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T A = 25˚C 2 under nominal conditions unless otherwise noted.
1 TJ : Junction Temperature
2 TA : Ambient Temperature
Table D-2. Static Characteristics - HSDRV
Characteristics noted under conditions 7V ≤ VSUPHS ≤ 18 V, -40˚C ≤ T J ≤ 150˚C 1 unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T A = 25˚C 2 under nominal conditions unless otherwise noted.
Num C Ratings Symbol Min Typ Max Unit
Num C Ratings Symbol Min Typ Max Unit
1 T High-Side Driver Operating Frequency f HS – – 10 kHz
2 T High-Load Resistance Open-Load Detection Switch On
Time
3 D High-Load Resistance Open-Load Detection Time
(capacitive load = 50pF)
4 D Settling time after the high-side driver is enabled (write
HSEx Bits)
530 Freescale Semiconductor
-1
-10
–
–
1
10
µ A
µ A
t HLROLOT – – 1 µs
t HLROLDT – – 40 µs
t HS_settling 1 – µs