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MC9S12VR-Family - Data Sheet - Freescale Semiconductor

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A.1.5 ESD Protection and Latch-up Immunity<br />

<strong>MC9S12VR</strong> <strong>Family</strong> Reference Manual, Rev. 2.8<br />

MCU Electrical Specifications<br />

All ESD testing is in conformity with CDF-AEC-Q100 stress test qualification for automotive grade<br />

integrated circuits. During the device qualification ESD stresses were performed for the Human Body<br />

Model (HBM) and the Charged-Device Model.<br />

A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device<br />

specification. Complete DC parametric and functional testing is performed per the applicable device<br />

specification at room temperature followed by hot temperature, unless specified otherwise in the device<br />

specification.<br />

Table A-3. ESD and Latch-up Test Conditions<br />

Model Spec Description Symbol Value Unit<br />

Human Body JESD22-A114<br />

Charged-<br />

Device<br />

Latch-up for<br />

5V GPIO’s<br />

Latch-up for<br />

LS/HS/HVI/V<br />

SENSE/LIN<br />

JESD22-C101<br />

Series Resistance R 1500 Ω<br />

Storage Capacitance C 100 pF<br />

Number of Pulse per pin<br />

-<br />

positive<br />

- 3<br />

negative<br />

3<br />

Series Resistance R 0 Ω<br />

Storage Capacitance C 4 pF<br />

Minimum Input Voltage Limit -2.5 V<br />

Maximum Input Voltage Limit +7.5 V<br />

Minimum Input Voltage Limit -7 V<br />

Maximum Input Voltage Limit +21 V<br />

Table A-4. ESD Protection and Latch-up Characteristics for Maskset 2N05E<br />

Num C Rating Symbol Min Max Unit<br />

1 C HBM: LIN to LGND<br />

+/- 6 - KV<br />

2 C HBM: VSENSE, HVI[3:0] to GND +/- 4 KV<br />

3 C HBM: HS1, HS2 to GND +/- 4 KV<br />

4 C HBM: LS0, LS1 to GND VHBM +/- 2 KV<br />

5 C HBM: Pin to Pin (all Pins LS0, LS1 excluded) +/- 2 KV<br />

6 C HBM: Pin to Pin (all Pins LS0, LS1 included) +/- 1.25 KV<br />

7 C CDM : Corner Pins V CDM +/-750 - V<br />

8 C CDM: All other Pins V CDM +/-500 V<br />

9 C Direct Contact Discharge IEC61000-4-2 with and with<br />

out 220pF capacitor (R=330, C=150pF):<br />

LIN vs LGND<br />

V ESDIEC +/-6 - KV<br />

<strong>Freescale</strong> <strong>Semiconductor</strong> 511

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