MC9S12VR-Family - Data Sheet - Freescale Semiconductor

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FTMRG Electrical Specifications 1 Minimum times are based on maximum fNVMOP and maximum f NVMBUS 2 Typical times are based on typical fNVMOP and typical f NVMBUS 3 Maximum times are based on typical fNVMOP and typical f NVMBUS plus aging 4 Worst times are based on minimum fNVMOP and minimum f NVMBUS plus aging 5 Affected by Pflash size 6 Affected by EEPROM size MC9S12VR Family Reference Manual, Rev. 2.8 558 Freescale Semiconductor
M.1.1 NVM Reliability Parameters Table M-2. Timing Characteristics MC9S12VR Family Reference Manual, Rev. 2.8 FTMRG Electrical Specifications The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process monitors and burn-in to screen early life failures. The data retention and program/erase cycling failure rates are specified at the operating conditions noted. The program/erase cycle count on the sector is incremented every time a sector or mass erase event is executed. NOTE All values shown in Table M-3 are preliminary and subject to further characterization. Conditions are shown in Table A-5 unless otherwise noted Table M-3. NVM Reliability Characteristics NUM C Rating Symbol Min Typ Max Unit 1 C Program Flash Arrays Data retention at an average junction temperature of TJavg = 85°C1 after up to 10,000 program/erase cycles tNVMRET 20 1002 2 C Program Flash number of program/erase cycles (-40°C ≤ Tj ≤ 150°C) 3 C EEPROM Array Data retention at an average junction temperature of TJavg = 85°C1 after up to 100,000 program/erase cycles 4 C Data retention at an average junction temperature of T Javg = 85°C 1 after up to 10,000 program/erase cycles 5 C Data retention at an average junction temperature of T Javg = 85°C 1 after less than 100 program/erase cycles 1 TJavg does not exceed 85°C in a typical temperature profile over the lifetime of a consumer, industrial or automotive application. 2 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please refer to Engineering Bulletin EB618 3 Spec table quotes typical endurance evaluated at 25°C for this product family. For additional information on how Freescale defines Typical Endurance, please refer to Engineering Bulletin EB619. M.1.2 NVM Factory Shipping Condition n FLPE 10K 100K 3 — Years — Cycles t NVMRET 5 100 2 — Years t NVMRET 10 100 2 — Years t NVMRET 20 100 2 — Years 6 C EEPROM number of program/erase cycles (-40°C ≤ Tj ≤ 150°C) n FLPE 100K 500K 3 — Cycles Devices are shipped from the factory with flash and EEPROM in the erased state. Data retention specifications stated in Table M-3. begin at time of this erase operation. For additional information on how Freescale defines Typical Data Retention, please refer to Engineering Bulletin EB618. Freescale Semiconductor 559
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MC9S12VR-Family Reference Manual S1
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Chapter 1 Device Overview MC9S12VR-
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2.3.34 Port L Analog Access Registe
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5.2 External Signal Description . .
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Chapter 9 Pulse-Width Modulator (S1
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12.4.6 Gated Time Accumulation Mode
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16.1.2 Modes of Operation . . . . .
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Appendix H LSDRV Electrical Specifi
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1.3 Chip-Level Features Feature MC9
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1.4.4 Main External Oscillator (XOS
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• Programmable polarity for trans
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1.5 Block Diagram PE0 PE1 VSUP VSS
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Address Module NOTE Reserved regist
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1.6.1 Part ID Assignments MC9S12VR
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1.7.2.7 PS[5:0] — Port S I/O Sign
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1.7.2.21 IOC[3:0] Signals MC9S12VR
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1.8.1 Pinout 48-pin LQFP LGND LIN (
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Package Function 48 LQ FP 32 LQ FP
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1.9 Modes of Operation MC9S12VR Fam
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1.11.2 Interrupt Vectors MC9S12VR F
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MC9S12VR Family Reference Manual, R
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Chapter 2 Port Integration Module (
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Port Pin Name 2.3 Memory Map and Re
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Global Address 0x0243 Reserved 0x02
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Global Address 0x0272 Reserved 0x02
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2.3.3 Port E Data Register (PORTE)
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1 Read: Anytime Write: Anytime Tabl
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2.3.10 Port T Data Register (PTT) M
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2.3.12 Port T Data Direction Regist
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2.3.15 Module Routing Register 0 (M
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Table 2-16. PTS Register Field Desc
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2.3.19 Port S Data Direction Regist
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2.3.21 Port S Polarity Select Regis
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MODRR20 MODRR21 TXD0 0 1 1 0 LPTXD
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Table 2-24. PTP Register Field Desc
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2.3.26 Port P Data Direction Regist
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2.3.29 Port P Polarity Select Regis
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2.3.32 Port L Input Register (PTIL)
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3 PTAENL 1-0 PTAL Table 2-34. PTAL
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2.3.37 Port L Interrupt Enable Regi
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2.3.41 Port AD Data Direction Regis
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2.3.44 Port AD Interrupt Enable Reg
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2.4.3.4 Port S MC9S12VR Family Refe
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Glitch, filtered out, no interrupt
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110K / 550K PIRL=0 / PIRL=1 HV Supp
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Chapter 3 S12G Memory Map Controlle
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3.2 External Signal Description Fig
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Read: Anytime. Write: Only if a tra
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3.3.2.4 Program Page Index Register
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0x0000 0x0400 0x8000 0xC000 0xFFFF
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Chapter 4 S12 Clock, Reset and Powe
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4.1.3 S12CPMU_UHV Block Diagram VSU
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4.2 Signal Description MC9S12VR Fam
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4.3 Memory Map and Registers MC9S12
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4.3.2 Register Descriptions MC9S12V
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Table 4-5. CPMUCLKS Descriptions Fi
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4.3.2.7 S12CPMU_UHV PLL Control Reg
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RTR[3:0] 0000 (÷1) 000 (OFF) OFF 1
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4.3.2.9 S12CPMU_UHV COP Control Reg
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Table 4-14. COP Watchdog Rates if C
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4.3.2.14 Low Voltage Control Regist
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APIES=0 APIES=1 MC9S12VR Family Ref
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4.3.2.18 Reserved Register CPMUTEST
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frequency MC9S12VR Family Reference
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4.3.2.23 Reserved Register CPMUTEST
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4.4.6 System Clock Configurations 4
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Chapter 5 Background Debug Module (
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5.1.3 Block Diagram A block diagram
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Global Address Register Name 0x3_FF
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Register Global Address 0x3_FF06 Fi
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• Hardware BACKGROUND command •
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5.4.5 BDM Command Structure Table 5
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Hardware Read Hardware Write Firmwa
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BDM Clock (Target MCU) Host Drive t
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5.4.9 SYNC — Request Timed Refere
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Chapter 6 S12S Debug Module (S12SDB
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• 4-stage state sequencer for tra
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Address: 0x0021 Reset POR Read: Any
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6.3.2.4 Debug Control Register2 (DB
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6.3.2.6 Debug Count Register (DBGCN
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6.3.2.7.1 Debug State Control Regis
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6.3.2.7.3 Debug State Control Regis
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Address: 0x0028 Read: DBGACTL if CO
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6.3.2.8.2 Debug Comparator Address
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6.3.2.8.6 Debug Comparator Data Low
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6.4.2.1.2 Comparator B MC9S12VR Fam
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RTI ; The execution flow taking int
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Field2 Bits in Normal and Loop1 Mod
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6.5.6 Scenario 5 MC9S12VR Family Re
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Chapter 7 Interrupt Module (S12SINT
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7.2 External Signal Description The
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Chapter 8 Analog-to-Digital Convert
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8.1.2 Modes of Operation 8.1.2.1 Co
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8.2 Signal Description This section
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8.3.2.3 ATD Control Register 2 (ATD
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Table 8-15. Analog Input Channel Se
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3-0 CC[3:0] 8.3.2.8 ATD Compare Ena
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8.3.2.10 ATD Input Enable Register
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8.3.2.12.2 Right Justified Result D
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Chapter 9 Pulse-Width Modulator (S1
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9.3 Memory Map and Register Definit
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Register Name 0x0016 PWMPER2 2 0x00
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9.3.2.2 PWM Polarity Register (PWMP
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9.3.2.6 PWM Control Register (PWMCT
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Module Base + 0x00006 Read: Anytime
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9.3.2.10 PWM Channel Counter Regist
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• The channel is disabled MC9S12V
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Divide by Prescaler Taps: Bus Clock
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9.4.2 PWM Channel Timers MC9S12VR F
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9.4.2.6 Center Aligned Outputs MC9S
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Clock Source 7 Clock Source 5 Clock
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• For channels 0, 1, 4, and 5 the
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Chapter 10 Serial Communication Int
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10.1.4 Block Diagram MC9S12VR Famil
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10.3.2 Register Descriptions MC9S12
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10.3.2.2 SCI Control Register 1 (SC
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10.3.2.3 SCI Alternative Status Reg
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10.3.2.5 SCI Alternative Control Re
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10.3.2.7 SCI Status Register 1 (SCI
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10.3.2.8 SCI Status Register 2 (SCI
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10.4 Functional Description MC9S12V
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10.4.3 Data Format MC9S12VR Family
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10.4.5 Transmitter Bus Clock SBR12:
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10.4.5.5 LIN Transmit Collision Det
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10.4.6.5.2 Fast Data Tolerance MC9S
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10.5.3.1 Description of Interrupt O
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Chapter 11 Serial Peripheral Interf
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SPI Interrupt Request Bus Clock SPI
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11.3.2 Register Descriptions MC9S12
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Table 11-4. SPICR2 Field Descriptio
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5 SPTEF 4 MODF Table 11-8. SPISR Fi
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Receive Shift Register SPIF SPI Dat
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11.4.3.1 Clock Phase and Polarity C
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NOTE Care must be taken when expect
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Chapter 12 Timer Module (TIM16B8CV3
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12.1.3 Block Diagrams PA input inte
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PULSE ACCUMULATOR CHANNEL 7 OUTPUT
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Register Name 0x000E TFLG1 1 0x000F
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12.3.2.3 Output Compare 7 Mask Regi
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Write: Anytime. 12.3.2.10 Timer Int
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NOTE The newly selected prescale fa
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12.3.2.15 16-Bit Pulse Accumulator
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... MC9S12VR Family Reference Manua
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12.4.1 Prescaler MC9S12VR Family Re
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12.4.5 Event Counter Mode MC9S12VR
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Chapter 13 High-Side Drivers - HSDR
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13.2 External Signal Description Ta
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13.3.2 Register Definition 13.3.3 P
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13.3.5 Reserved Register MC9S12VR F
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13.3.8 HSDRV Interrupt Flag Registe
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13.4.4.1 HSDRV Over Current Interru
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Chapter 14 Low-Side Drivers - LSDRV
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14.2 External Signal Description Ta
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14.3.2 Register Definition 14.3.3 P
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14.3.5 Reserved Register MC9S12VR F
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14.3.7 LSDRV Status Register (LSSR)
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14.3.9 LSDRV Interrupt Flag Registe
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14.4.4.1 LSDRV Over Current Interru
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Chapter 15 LIN Physical Layer (S12L
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IP-BUS LPRXD LPTXD Figure 15-1. LIN
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15.3 Memory Map and Register Defini
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15.3.2.2 LIN Control Register (LPCR
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7 LPSLRWD 1-0 LPSLR[1:0] 15.3.2.5 R
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15.3.2.7 LIN Interrupt Enable Regis
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NOTE For 20kBit/s and Fast Mode com
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15.4.3.2 Normal Mode MC9S12VR Famil
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15.5.2 Use Cases 15.5.2.1 LIN Physi
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Chapter 16 Supply Voltage Sensor -
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16.3.2.1 BATS Module Enable Registe
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16.3.2.2 BATS Module Status Registe
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16.3.2.5 Reserved Register NOTE The
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Chapter 17 64 KByte Flash Module (S
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17.1.2.3 Other Flash Module Feature
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P-Flash Memory Map Global Address S
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Address & Name 0x0003 FRSV0 0x0004
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6 FDIVLCK 5-0 FDIV[5:0] 17.3.2.2 Fl
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The security function in the Flash
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Offset Module Base + 0x0005 All ass
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Table 17-15. FERSTAT Field Descript
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Table 17-19. P-Flash Protection Low
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Scenario FLASH START 0x3_8000 0x3_F
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011 100 101 17.3.2.12 Flash Reserve
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17.3.2.17 Flash Reserved5 Register
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FCCOB Availability Check Clock Divi
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17.4.4.4 P-Flash Commands MC9S12VR
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17.4.6 Flash Command Description MC
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Table 17-35. Erase Verify P-Flash S
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17.4.6.6 Program Once Command Table
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Table 17-44. Erase Flash Block Comm
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17.4.6.13 Set Field Margin Level Co
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Table 17-59. Erase Verify EEPROM Se
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17.4.7 Interrupts MC9S12VR Family R
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Page 505 and 506: Appendix A MCU Electrical Specifica
Page 507 and 508: A.1.3 Current Injection MC9S12VR Fa
Page 509 and 510: A.1.5 ESD Protection and Latch-up I
Page 511 and 512: A.1.6 Operating Conditions MC9S12VR
Page 513 and 514: VBAT GND Figure A-2. Supply Current
Page 515 and 516: A.1.8 I/O Characteristics This sect
Page 517 and 518: Table A-10. CPMU Configuration for
Page 519 and 520: Appendix B VREG Electrical Specific
Page 521 and 522: Appendix C ATD Electrical Specifica
Page 523 and 524: Supply voltage 3.13 V < V DDA < 5.5
Page 525 and 526: Supply voltage V DDA =5.12 V, -40 o
Page 527 and 528: Appendix D HSDRV Electrical Specifi
Page 529 and 530: Appendix E PLL Electrical Specifica
Page 531 and 532: MC9S12VR Family Reference Manual, R
Page 533 and 534: Appendix F IRC Electrical Specifica
Page 535 and 536: Appendix G LINPHY Electrical Specif
Page 539 and 540: Appendix H LSDRV Electrical Specifi
Page 541 and 542: Appendix I BATS Electrical Specific
Page 543 and 544: 9 D VSENSE Series Resistor Required
Page 545 and 546: Appendix J PIM Electrical Specifica
Page 547 and 548: Appendix K SPI Electrical Specifica
Page 549 and 550: f SCK /f bus 1/2 1/4 5 Figure K-3.
Page 551 and 552: In Table K-3. the timing characteri
Page 553 and 554: Appendix L XOSCLCP Electrical Speci
Page 555: Appendix M FTMRG Electrical Specifi
Page 559 and 560: Appendix N Package Information MC9S
Page 565 and 566: Appendix O Ordering Information MC9
Page 567 and 568: Appendix P Detailed Register Addres
Page 569 and 570: 0x001A-0x001B Part ID Registers MC9
Page 571 and 572: 0x0034-0x003F Clock Reset and Power
Page 573 and 574: 0x0070-0x009F Analog to Digital Con
Page 575 and 576: 0x00A0-0x00C7 Pulse Width Modulator
Page 579 and 580: 0x0120 Interrupt Vector Base Regist
Page 581 and 582: 0x0160-0x0167 LIN Physical Layer (L
Page 583 and 584: 0x0240 -0x027F Port Integration Mod
Page 585 and 586: 0x0280-0x02EF Reserved MC9S12VR Fam
Page 588: How to Reach Us: USA/Europe/Locatio
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MC9S12VR-Family - Data Sheet - Freescale Semiconductor

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