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MC9S12VR-Family - Data Sheet - Freescale Semiconductor

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Appendix M<br />

FTMRG Electrical Specifications<br />

M.1 Timing Parameters<br />

<strong>MC9S12VR</strong> <strong>Family</strong> Reference Manual, Rev. 2.8<br />

FTMRG Electrical Specifications<br />

The time base for all NVM program or erase operations is derived from the bus clock using the FCLKDIV<br />

register. The frequency of this derived clock must be set within the limits specified as f NVMOP . The NVM<br />

module does not have any means to monitor the frequency and will not prevent program or erase operation<br />

at frequencies above or below the specified minimum. When attempting to program or erase the NVM<br />

module at a lower frequency, a full program or erase transition is not assured.<br />

All timing parameters are a function of the bus clock frequency, f NVMBUS . All program and erase times<br />

are also a function of the NVM operating frequency, f NVMOP . A summary of key timing parameters can be<br />

found in Table M-1.<br />

Num C Command<br />

Table M-1. NVM Timing Characteristics<br />

f NVMOP<br />

cycle<br />

f NVMBUS<br />

cycle<br />

Symbol Min 1 Typ 2 Max 3 Worst 4 Unit<br />

1 Bus frequency 1 — f NVMBUS 1 25 25 MHz<br />

2 NVM Operating frequency — 1 f NVMOP 0.8 1.0 1.05 MHz<br />

3 D Erase Verify All Blocks 0 17169 t RD1ALL 0.69 0.69 1.37 34.34 ms<br />

4 D Erase Verify Block (Pflash) 5 0 16924 t RD1BLK_P 0.68 0.68 1.35 33.85 ms<br />

5 D Erase Verify Block (EEPROM) 6 0 744 t RD1BLK_D 0.03 0.03 0.06 1.49 ms<br />

6 D Erase Verify P-Flash Section 0 476 t RD1SEC 19.04 19.04 38.08 952.00 us<br />

7 D Read Once 0 445 t RDONCE 17.80 17.80 17.80 445.00 us<br />

8 D Program P-Flash (4 Word) 164 2896 t PGM_4 0.27 0.28 0.63 11.79 ms<br />

9 D Program Once 164 2859 t PGMONCE 0.27 0.27 0.28 3.06 ms<br />

10 D Erase All Blocks 5, 6 100066 17505 t ERSALL 96.00 100.77 101.47 160.09 ms<br />

11 D Erase Flash Block (Pflash) 100060 17150 t ERSBLK_P 95.98 100.75 101.43 159.38 ms<br />

12 D Erase Flash Block (EEPROM) 100060 1033 t ERSBLK_D 95.34 100.10 100.14 127.14 ms<br />

13 D Erase P-Flash Sector 20015 858 t ERSPG 19.10 20.05 20.08 26.73 ms<br />

14 D Unsecure Flash 100066 17570 t UNSECU 96.00 100.77 101.47 160.22 ms<br />

15 D Verify Backdoor Access Key 0 481 t VFYKEY 19.24 19.24 19.24 481.00 us<br />

18 D Erase Verify EEPROM Sector 0 546 t DRD1SEC 0.02 0.02 0.04 1.09 ms<br />

19 D Program EEPROM (1 Word) 68 1552 t DPGM_1 0.13 0.13 0.32 6.29 ms<br />

20 D Program EEPROM (2 Word) 136 2486 t DPGM_2 0.23 0.24 0.53 10.11 ms<br />

21 D Program EEPROM (3 Word) 204 3420 t DPGM_3 0.33 0.34 0.75 13.94 ms<br />

22 D Program EEPROM (4 Word) 272 4354 t DPGM_4 0.43 0.45 0.97 17.76 ms<br />

23 D Erase EEPROM Sector 5015 746 t DERSPG 4.81 5.04 20.57 37.76 ms<br />

<strong>Freescale</strong> <strong>Semiconductor</strong> 557

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