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locate the memory "cell" that is to be involved in the transfer. In this<br />

case, the cell is an 8-bit word or byte.<br />

The "bar" over part of the signal notation indicates that when the<br />

signal is a logic zero, a write operation is taking place; and when in<br />

the logic one state, a read operation is taking place. Thus, a single<br />

line controls all of the memory functions. In some 6502-based computer<br />

systems and peripherals, you may see the signal "split," tovide<br />

two memory control signals, memory read ( MEMR or MR),<br />

and memory write ( MEMW or MW). This takes some additional<br />

gating, so in most cases, the R/W signal is used by itself. It is available<br />

at pin 34 on the 6502 microprocessor chip.<br />

You may also see the notation RAM used to incorrectly signify<br />

read/write memory. The acronym RAM stands for random-access<br />

memory. In fact, all of the modern, easy-to-use memory devices are<br />

random access, since one may address one location and then any<br />

other, without having to sequence through all of the locations between<br />

the two addresses.<br />

Pin configurations for typical memory chips have been provided<br />

in Fig. 1-2.<br />

For additional information about memory devices, we refer you to<br />

• Intel Memory Design Handbook, Intel Corporation, Santa<br />

Clara, CA 95051, 1975.<br />

PIN CONFIGURATION<br />

24<br />

Vee<br />

PIN CONFIGURATION<br />

LOGIC SYMBOL<br />

M2708<br />

As<br />

Ag Ill<br />

Vee<br />

CS/WE<br />

\\Jo<br />

PROGRAM<br />

Os<br />

A s<br />

A5<br />

A4<br />

A3<br />

A o<br />

A1<br />

A 1<br />

cs<br />

GND<br />

A<br />

1 18 Vee<br />

o<br />

A1<br />

2 17 A i 1101<br />

A<br />

3 16 z<br />

A s<br />

A3<br />

4 2114 15 Ag<br />

A4<br />

1102<br />

5 14 1101<br />

6 13 1102<br />

A 1/03<br />

7 12 1/03<br />

s<br />

A<br />

8 11 1/04<br />

i<br />

A<br />

1/04<br />

9 10 WE<br />

s<br />

cs<br />

A5<br />

A 9 WE<br />

05<br />

04<br />

03<br />

A o -A 9<br />

PIN NAMES<br />

ADDRESS INPUTS<br />

Vee POWER (+5V)<br />

PIN NAMES<br />

Ao·A9 ADDRESS INPUTS<br />

01-0e DATA OUTPUTS/INPUTS<br />

CS/WE CHIP SELECT/WRITE ENABLE INPUT<br />

WE WRITE ENABLE GND GROUND<br />

cs CHIP SELECT<br />

1101-1/04 DATA INPUT/OUTPUT<br />

Fig. 1·2. Pin configuration for 2708 lK X 8 PROM and 2114 lK X<br />

4 R/W memory.<br />

13

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