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Complete Report - University of New South Wales

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Z. Ouyang, X. Zhao, S. Varlamov, Y. Tao, J. Wongand S. Pillai, “Nanoparticles Enhanced Light-Trapping in Thin-Film Silicon Solar Cells”, Progress inPhotovoltaics (submitted November 2010).R. Patterson, M. Kirkengen, B. Puthen-Veettil, D.Konig, M.A. Green and G. Conibeer, “Phonon Lifetimesin Model Quantum Dot Superlattice Systems withApplications to the Hot Carrier Solar Cell”, SolarEnergy Materials & Solar Cells, Vol. 94, pp. 1931-1935, 2010.S. Pillai and M.A. Green, “Plasmonics for PhotovoltaicApplications”, Solar Energy Materials and Solar Cells,Vol. 94, pp. 1481-1486, 2010.S. Pillai, I. Perez-Wurfl, G.J. Conibeer and M.A. Green,“Surface Plasmons for Improving the Performance <strong>of</strong>Quantum Dot Structures for Third Generation SolarCell Applications”, Physica Status Solidi, Vol. 8, pp.181-184, 2011.B. Puthen-Veettil, D. König, G. Conibeer and M.A.Green, “Impact <strong>of</strong> Disorder in Double Barrier QDStructures on Energy Selectivity Investigated by TwoDimensional Effective Mass Approximation”, EnergyProcedia, Vol. 2, p. 213, 2010.Santosh K. Shrestha, Pasquale Aliberti and Gavin J.Conibeer, “Energy Selective Contacts for Hot CarrierSolar Cells”, Solar Energy Materials and Solar Cells, Vol.94, pp. 1546-1550, September 2010.R.A Sinton and T. Trupke, “Limitations on DynamicExcess-Carrier Lifetime Calibration Methods”, Progressin Photovoltaics (accepted March 2011).Y-H. So, M.A. Green, G. Conibeer, S. Huang and A.Gentle, “Size Dependent Optical Properties <strong>of</strong> SiQuantum Dots in Si-rich Nitride/Si 3N 4SuperlatticeSynthesized by Magnetron Sputtering”, Journal <strong>of</strong>Applied Physics (accepted February 2011).Yong-Heng So, Shujuan Huang, Gavin Conibeer andMartin A Green, “Formation and Photoluminescence<strong>of</strong> Si Nanocrystals in Controlled Multilayer StructureComprising <strong>of</strong> Si-rich Nitride and Ultrathin SiliconNitride Barrier Layers”, Thin Solid Films (acceptedFebruary 2011).A. Sugianto, L. Mai, M.B. Edwards, S.R. Wenham etal., “Investigation <strong>of</strong> Al-Doped Emitter on N-TypeRear Junction Solar Cells”, IEEE Transactions onElectron Devices, Volume: 57, Issue: 2, pp. 525-529,February 2010.Y. Takeda, T. Motohiro, D. König , P. Aliberti, Y. Feng, S.Shrestha and G. Conibeer, “Practical Factors LoweringConversion Efficiency <strong>of</strong> Hot Carrier Solar Cells,Applied Physics Express”, Applied Physics Express 3,p. 104301, 2010.C.Y. Tsao; J. W. Weber; P. Campbell; G. Conibeer; D.Song and M.A. Green, “In Situ Low TemperatureGrowth <strong>of</strong> Poly-Crystalline Germanium Thin Filmon Glass by RF Magnetron Sputtering”, Solar EnergyMaterials and Solar Cells, Vol. 94, pp. 1501-1505, 2010.C.Y. Tsao, J. Wong, J-L. Huang; P. Campbell, D. Songand M.A. Green, “Structural Dependence <strong>of</strong> ElectricalProperties <strong>of</strong> Ge Films Prepared by RF MagnetronSputtering”, Applied Physics A, Vol. 102, pp. 689-694, 2010.C.Y. Tsao, P. Campbell, D. Song and M.A. Green,“Influence <strong>of</strong> Hydrogen on Structural and OpticalProperties <strong>of</strong> Low Temperature Polycrystalline GeFilms Deposited by RF Magnetron Sputtering”,Journal <strong>of</strong> Crystal Growth, Vol. 312 (9), pp. 2647-2655, 2010.C.Y. Tsao, J.L. Huang, X.J. Hao, P. Campbell andM.A. Green, “Heavily Boron-Doped HydrogenatedPolycrystalline Ge Thin Films Prepared byCosputtering”, Electrochemical and Solid-StateLetters, Vol. 13 (10), pp. H354-H356, 2010.T. Trupke, J, Nyhus and J.Haunschild, “LuminescenceImaging for Inline Characterisation in SiliconPhotovoltaics”, Phys.Stat.Sol. (RRL) (published online2 February 2011).A. Uddin, C. B. Lee and T. G. Anderson, “Initial Rise <strong>of</strong>Transient Electroluminescence in Doped Alq 3Films”,Physica Status Solidi A, Vol. 207, No. 10, pp. 2334-2338, 2010A. Uddin and C. B. Lee, “Exciton Behaviour in DopedTris (8-hydroxyquinoline) Aluminum (Alq 3) Films),Physica Status Solidi C, Vol. 8 (1), pp. 80-83, 2011.A. Uddin, C. B. Lee and J. Wong, “Emission Properties<strong>of</strong> Dopants Rubrene and Coumarin 6 in Alq 3Films”,Journal <strong>of</strong> Luminescence, Vol. 131, pp. 1037-1041, 2011.Z. Wan, S. Huang, M.A. Green and G. Conibeer,“Residual Stress Study <strong>of</strong> Silicon Quantum Dot inSilicon Carbide Matrix by Raman Measurement”,Physica Status Solidi C, Vol. 8 (1), pp. 185-188, 2011.Z. Wan, S. Huang, M.A. Green and G. Conibeer, “RapidThermal Annealing and Crystallization MechanismsStudy <strong>of</strong> Silicon Nanocrystal in Silicon CarbideMatrix”, Nanoscale Research Letters, 6:129, 2011.S. Wang, A. Lennon, B. Tjahjono and S. Wenham,“Overcoming Overplating Problems for PECVD SiNxPassivated, Laser-doped p-type MulticrystallineSilicon Solar Cells, Solar Energy Materials and SolarCells (submitted March 2011).K. S. Wang, B. S. Tjahjono, J. Wong, A. Uddin and S.R. Wenham, “Sheet Resistance Charaacterization<strong>of</strong> Laser-dope on Crystalline Silicon Wafers forPhotovoltaic Applications”, Solar Energy materialsand Solar Cells, Vol. 95, pp. 974-980, 2011.K. S. Wang, B. S. Tjahjono, A. Uddin and S. R. Wenham,“A Method to Characterize the Sheet Resistance <strong>of</strong>a Laser Doped Line on Crystalline Silicon Wafers forPhotovoltaic Applications”, Applied Physics Letters,Vol. 98, pp. 094105 (1-3), 2011.J. Wong, J. L. Huang, S. Varlamov, M. A. Green,R. Evans, M. Keevers and R. Egan, “StructuralInhomogeneities in Polycrystalline Silicon OnGlass Solar Cells and Their Effects on DeviceCharacteristics”, Progress in Photovoltaics: Researchand Applications, DOI: 10. 1002/pip.1089, 2011.J. Wong, J.L. Huang, B. Eggleston, M.A. Green, O. Kunz,R. Evans, M. Keevers and R.J. Egan, “Lifetime LimitingRecombination Pathway in Thin-Film PolycrystallineSilicon on Glass Solar Cells” Journal <strong>of</strong> AppliedPhysics, Vol. 107, p.123705, 2010.Y. Yao, A. Sugianto, A. Lennon, B. Tjahjono and S.Wenham, “Use <strong>of</strong> ICP-MS and OES Measurementsto Characterise Light-induced Plating for SiliconSolar Cells”, Solar Energy Materials and Solar Cells(submitted January 2011).G. Zatryb, A. Podhorodecki, X.J. Hao, J. Misiewicz,Y.S. Shen and M.A. Green, “Quantitative Evaluation<strong>of</strong> Boron-Induced Disorder in Multilayers ContainingSilicon Nanocrystals in an Oxide Matrix Designed forPhotovoltaic Applications”, Optics Express, Vol. 18, No.21, pp. 22004-22009, 2010.B. Zhang, S. Shrestha, M.A. Green and G. Conibeer,“Surface States Induced High p-type Conductivityin Nanostructured Thin Film Composed <strong>of</strong> Genanocrystals in SiO 2Matrix”, Applied Physics Letters,Vol. 97, p. 132109, 2010.B. Zhang, S.K. Shrestha, M.A. Green and G.J. Conibeer,“Size Controlled Synthesis <strong>of</strong> Ge Nanocrystals inSiO 2at Temperatures Below 400 degree C UsingMagnetron Sputtering”, Applied Physics Letters, Vol.96, p. 26901, 2010.B. Zhang, S. Shrestha, P. Aliberti, M.A. Green and G.Conibeer, “Characterisation <strong>of</strong> Size-Controlled andRed Luminescent Ge Nanocrystals in MultilayeredSuperlattice Structure”, Thin Solid Films, Vol. 518, pp.5483-5487, 2010.B. Zhang, Y. Yao, R. Patterson, S. Shrestha, M. A. Greenand G. Conibeer, “Electrical Properties <strong>of</strong> ConductiveGe Nanocrystal Thin Films Fabricated by LowTemperature in Situ Growth”, Nanotechnology, Vol.22, p. 125204, 2011.8.5 UNREFEREED Papers in Scientific andTechnical JournalsRichard Corkish, “Our Time to Shine: Australia’sBurgeoning Solar Energy Industry”, Ecogeneration,Issue 57, pp. 24, 26, March/April 2010.http://ecogeneration.com.au/news/our_time_to_shine_australias_burgeoning_solar_energy_industry/012453/ (invited).T. Trupke and W. McMillan, “PhotoluminescenceImaging Speeds Solar Cell inspection”, Laser FocusWorld, 12/2010.T. Trupke, “Photolumineszenz Bildgebung für dieSilizium-Photovoltaik”, Photonik 1/2011, p.38, 2011.126

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