Complete Report - University of New South Wales

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ARCPHOTOVOLTAICSCENTRE OFEXCELLENCE2010/11ANNUAL REPORTRemote plasma PECVD machine.Figure 4.2.7Flash Cell Tester.Figure 4.2.5Optical characterisation bench.Figure 4.2.6Contact solar cell fabrication, cutting 35-micronwide laser grooves as deep as 100 microns intosilicon wafers and scribing wafers in preparation forcleaving. It can also be used to cut other suitablematerials, such as stainless steel.Device Characterisation LaboratoryThis laboratory is located on the lower ground floorof the Electrical Engineering Building. Associatedwith it is the Optoelectronic Research Laboratories,reception area, seminar room, offices for Centre staffinteracting with the public and industry, includingthe Business & Technology Manager, FinanceOfficer, External Relations and Design AssistanceDivision Manager.The Device Characterisation Laboratory housescharacterisation equipment including “DarkStar”, the Centre’s station for temperaturecontrolled illuminated and dark current-voltagemeasurements, the Centre’s Fourier-transforminfrared spectroscopy system (FTIR), frequencydependent impedance analyser, ellipsometer,Sinton photoconductance lifetime equipment,wafer probing station, open circuit voltage versusillumination measurement system (Suns-V oc), 4 pointresistivity probe, spectral response system andspectrophotometer with integrating sphere.In 2008, a multi function wafer mapping tool, shownin Figure 4.2.4, was installed. This unit providesstate of the art capability for the measurementof carrier lifetime, bulk resistivity, emitter sheetresistance and Light Beam Induced Current (LBIC)on wafer samples.Additions in 2009 included a high speedcommercial flash cell tester with 156 mm squarewafer capability as shown in Fig 4.2.5, a replacementUV/VIS/NIR spectrophotometer and a commercialLuminescence Inspection System (LIS) from spin offcompany BT Imaging.Optoelectronic Research LaboratoriesThis facility has six optical benches and severalvisible and near-infrared semiconductor diodelasers along with other optical and electricalinstrumentation. The facility is used forphotoluminescence (PL) and electroluminescencemeasurements in the visible and infrared spectralrange up to wavelengths of 2500nm, luminescenceexperiments with simultaneous two-colourillumination, quasi steady state photoluminescencelifetime measurements and Sinton lifetime testingwith the conventional flash-light replaced by a highpowerlight emitting diode array.This facility also houses the Centre’s world-leadingfirst photoluminescence imaging system. Otherequipment includes a silicon CCD camera (forsensitive PL measurements), spectroscopic PLsystems, PL lifetime measurement unit, and LBICmeasurement system. Areas separate from theDevice Characterisation Laboratory were necessaryin order to meet stringent standards for safe laseruse. It shares cryogenic cooling equipment with theDevice Characterisation Laboratory.Thin-Film Cell LaboratoryThis 40 m 2 laboratory is equipped with a range ofequipment for thin-film deposition and patterning,including a plasma-enhanced chemical vapourdeposition (PECVD) system, a sputtering system,larger area plasma etcher, a reactive ion etcher (RIE),a resistively heated vacuum evaporator, heliumleak detector and an optical microscope withdigital image acquisition system. Also used by thelaboratory is an electron-beam vacuum evaporatorfor silicon which is physically located within theBulk Silicon Research Laboratory. This Si evaporatoris also equipped with an ionizer unit and a sampleheater, enabling fast-rate Si homoepitaxy attemperatures of about 500-600°C by means of ionassisteddeposition (IAD). The IAD is also equippedwith a residual gas analyser to permit real timeprocess monitoring. Other equipment of use in thinfilmprojects is located within the SemiconductorNanofabrication Facility.18
ARCPHOTOVOLTAICSCENTRE OFEXCELLENCE2010/11ANNUAL REPORTThermal and e-beam Evaporator.Figure 4.2.8The PECVD system, shown in Fig. 4.2.7, has a 40 x20 cm 2 process platen and can handle large-areasilicon wafers as well as smaller pieces. Two typesof plasma excitation (remote microwave and directRF) are available. The machine is used for thelow-temperature deposition of thin dielectric films(silicon nitride, silicon dioxide, silicon oxy-nitrides)and of amorphous silicon. The dual-cylinder,remote microwave plasma source producesexcellent-quality silicon nitride and silicon dioxidefilms, with precise control over the stoichiometryat temperatures up to 500°C. Amorphous andmicrocrystalline silicon films can also be depositedin the system.In 2008, the thermal evaporator was upgraded toalso support e-beam evaporation. This capabilitygreatly expands the range of materials which can bedeposited and is of great interest to 3 rd generationresearchers. In 2009 a new 4 point probing stationwas added to the laboratory. In 2010 the computersupport system for the optical microscope wasupgraded to improve the useability of the digitalcamera fitted.Industry Collaborative LaboratoryThis 120 m 2 laboratory houses equipment neededfor many of the industry-collaborative researchactivities including the Buried-Contact Solar Cellgroup. The laboratory equipment includes a beltfurnace; a state of the art laser micromachiningtool; a new PECVD deposition system (located inthe adjacent Thin Film Solar Cell Laboratory); aTiO 2spray deposition station; a high temperaturesemiconductor muffle furnace, manual screenprinter and a fully automatic production scalescreen printer. In 2008, a new 532nm green laserwas added and customised in-house to increase thecapability for processing laser doped solar cells.In 2009, new additions included a fast metallizationfiring furnace capable of processing 156 mm squarewafers, a light induced plating system, spin ondoper and mirror steered scanning laser for laserdoping. In 2010 a new wafer spinner was addedto the laboratory. Off site at 78 Bay St Botany, anitrogen environment belt furnace capable of nickelsintering 156 mm square wafers and larger on its 25inch wide belt was installed.Inkjet Processing Development LabThis laboratory houses the Centre’s inkjet printingdevelopment systems. The laboratory is used todevelop solar processing “inks” (chemical solutions)and for printing them onto a solar wafer undercomputer control. The aim is to develop low costprocessing techniques for creating fine structures insolar cells. It is anticipated that the inkjet printing iscapable of replacing processes such as laser scribingand photolithography for forming fine patternsfor contacting but at a cost of at least 10 timescheaper. Equipment includes two ink jet materialdeposition printing systems, capable of depositinga wide range of materials onto different substrates,a surface tension meter and viscometer. In 2009 acommercial aerosol deposition system capable ofvery fine scale patterning was purchased.Semiconductor Nanofabrication FacilityThe Centre also owns equipment within, and hasaccess to, the Semiconductor NanofabricationFacility (SNF) at the University. This is a joint facilityshared by the Faculties of Science and Engineeringand houses a microelectronics laboratory and ananofabrication laboratory for e-beam lithography.The SNF provides an Australian capability for thefabrication of advanced nanoscale semiconductordevices and their integration with microelectronics.SNF research projects form an integrated effort tofabricate innovative semiconductor nanostructuresusing the latest techniques of electron beampatterning and scanning probe manipulation.A major applied objective of the facility is thedevelopment of a prototype silicon nuclear spinquantum computer. The capabilities of this facilitywere expanded to house the, NCRIS funded,Australian National Nanofabrication Facility. In2010 the facility added a new large area e-beamlithography system and new e-beam evaporator fornon MOS-compatible metals deposition.Inkjet development systems.Figure 4.2.919
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