2009 SEMICONDUCTORS AND NANOSTRUCTURESCyclotron effective mass measurem<strong>en</strong>ts in Indium NitrideAmong the group III-nitride materials, the electronic structureof InN is matter of continuing debate <strong>des</strong>pite significantprogress during the last decade in understandingthe band structure, as the revision of its band gap <strong>en</strong>ergyfrom 1.8 − 2.1 eV to 0.7 eV. So far, band parameters aremostly derived from indirect methods of limited accuracysuch as infrared reflectivity measurem<strong>en</strong>ts. For instance,the values of the effective mass remain scattered in a widerange from 0.044 m 0 to 0.093 m 0 . Moreover, a stronglyanisotropic electronic structure of the bulk crystal has be<strong>en</strong>claimed to explain Shubnikov-de-Haas (SdH) oscillationsand magneto-optical properties. To date, the synthesis ofhighly pure InN single crystals remains a chall<strong>en</strong>ge and, inaddition, most measurem<strong>en</strong>ts are affected by the pres<strong>en</strong>ceof an intrinsic low mobility surface and/or interface electronaccumulation layer that op<strong>en</strong>s parallel conduction channels.an isotropic electron-LO phonon coupling constant in InN,α = 0.22, the polaron mass ism ∗ P = m∗ P= (1 + α/12)/(1 − α/12). (10)m∗ One finds a 4% correction that finally gives the bare massat the bottom of the conduction band equal to m ∗ 0 = 0.055±0.002 m 0 . The band parameter E p in the dispersion relation(1) thus becomes E p = 12 eV , with E g = 0.69 eV.We have rec<strong>en</strong>tly performed the first measurem<strong>en</strong>t of thebulk electron cyclotron effective mass by Landau levelsspectroscopy: the most direct approach to measure effectivemasses. To derive the mass, we have used the temperaturedep<strong>en</strong>d<strong>en</strong>ce of the SdH oscillation amplitu<strong>des</strong> measuredunder magnetic field up to 60 T in the temperaturerange 2 − 70 K. A set of InN samples 1 µm thick havingHall conc<strong>en</strong>trations 2 − 3 − 6 × 10 18 cm −3 has be<strong>en</strong> investigated.We found an isotropic electron cyclotron effectivemass equal to 0.062 ± 0.002 m 0 but the highest doped sampleexhibits a puzzling anisotropy.In the pres<strong>en</strong>t study, we find a single SdH series (see figure58) for magnetic field parallel to the c-axis in contrastwith [Inushima et al, Phys. Rev. B 72, 085210(2005)] where an additional SdH series at higher frequ<strong>en</strong>cyis reported for a sample with a similar Hall conc<strong>en</strong>trationn H = 2.2 × 10 18 cm −3 . Our single series behaves like themain series of this previous study and keeps the same periodwh<strong>en</strong> the magnetic field is tilted towards a direction perp<strong>en</strong>dicularto the c-axis. Consequ<strong>en</strong>tly, this series accounts foran isotropic bulk Fermi surface as stated in this work. Onthe other hand since 2D-surface accumulation series are notevid<strong>en</strong>ced, one may suggest that the surface electrons havea low mobility that broad<strong>en</strong>s the 2D-Landau levels and/orinhomog<strong>en</strong>eous electron conc<strong>en</strong>tration causing Fermi levelfluctuations that washes out the oscillations.Taking into account non-parabolicity corrections the bottomband effective mass is[m ∗ 0 = m ∗ 1 − E ]F( m∗− 1) 2 , (9)E g m 0and takes the value m ∗ 0 = 0.057 m 0. Another correction tobe tak<strong>en</strong> into account is the polaron contribution. AssumingFigure 58: (a) Resistance versus magnetic field for the three samplesS1, S2 (left scale) and S3 (right scale) measured at 2 K. (b)SdH oscillations versus reciprocal magnetic field obtained fromthe magnetoresistance curves; a parabolic back-ground contributionhas be<strong>en</strong> subtracted and all curves have be<strong>en</strong> shifted verticallyfor clarity. (c) Temperature dep<strong>en</strong>d<strong>en</strong>ce of the oscillation amplitudefor SdH peaks with N = 3 and N = 4 Landau level index(sample S1)To summarize, electron cyclotron effective mass of InN onc-sapphire substrate is obtained from the temperature dep<strong>en</strong>d<strong>en</strong>ceof Shubnikov-de Haas oscillations. An isotropiccyclotron effective mass equal to 0.062 ± 0.002 m 0 is measuredfor samples having bulk electron conc<strong>en</strong>tration in therange 1 − 4 × 10 18 cm −3 . After non-parabolicity and polaroncorrections, the effective mass at the bottom of theband is found to be m ∗ 0 = 0.055 m 0 ± 0.002.J.M. Poumirol, M. Millot, M. Goiran and J. LeotinW. Walukiewicz (Lawr<strong>en</strong>ce Berkeley <strong>National</strong> Laboratory, Berkeley, USA) and I. Gherasoiu (RoseStreet Labs Energy,Pho<strong>en</strong>ix, USA)45
SEMICONDUCTORS AND NANOSTRUCTURES 2009Oscillatory magneto-absorption under pressure in Indium Sel<strong>en</strong>ideIndium sel<strong>en</strong>ide is a layered semiconductor widely investigatedin the last deca<strong>des</strong> for its pot<strong>en</strong>tial optoelectronic applicationscharacterized by an anisotropic anomalous bandstructuredue to the balance betwe<strong>en</strong> coval<strong>en</strong>t and van derWaals bonds. Various experim<strong>en</strong>ts have revealed a puzzlingbehavior for the electron effective mass.Modern ab-initio band structure calculations by NAO-DFTcombined with optical measurem<strong>en</strong>ts under high pressurehave explained this anomaly and have also unveiled newinteresting features such as the onset of a ring-shaped val<strong>en</strong>ceband maximum above 2 GPa. In fact, a specific k.pmodel has rec<strong>en</strong>tly be<strong>en</strong> proposed for this class of layeredsemiconductors [Segura et al., Phys. Stat. Solidi B 235(2),267276 (2003)].Oscillatory magneto-absorption spectroscopy measurem<strong>en</strong>tsunder high pressure yield a very deep insight intothe unusual electronic properties of this compound. We obtainedfor the first time clear signature of the Landau quantizationin a wide <strong>en</strong>ergy range above the fundam<strong>en</strong>tal gap,giving access to the conduction band non-parabolicity (figures59 and 60). In addition, the high field regime for theexcitonic feature has be<strong>en</strong> studied.The pressure dep<strong>en</strong>d<strong>en</strong>ce of the magneto-fingerprints unveilan increase of the reduced effective mass similar withthe evolution of the second gap transition, which confirmsthe main hypothesis of the specific k.p model. Moreover,the re<strong>en</strong>trant behavior of the pressure-qu<strong>en</strong>ched excitonpeak under high magnetic field (figure 61) unveils anunusual ring-shaped val<strong>en</strong>ce band maximum with a smallhole effective mass as suggested by previous transport experim<strong>en</strong>tsunder pressure and ab-initio calculations.Figure 59: Oscillatory magneto-absorption spectroscopy colorplot of InSe measured at 4 K up to 53 T. The excitonic groundstate feature is clearly distinguishable around 1.34 eV as well asinterband Landau level transition which <strong>en</strong>ergy increases linearlywith the applied magnetic field.Using a toy model taking into account a linear Landau gapop<strong>en</strong>ing and the reported pressure dep<strong>en</strong>d<strong>en</strong>ce of the val<strong>en</strong>ceband maxima and conduction band minima form previousoptical measurem<strong>en</strong>ts under pressure we can estimatethe hole mass on the secondary maximum to be ∼ 0.03 m 0 .Figure 60: Interband Landau fan chart recorded in the diamondanvil cell.Figure 61: Re<strong>en</strong>trant behavior of the pressure-qu<strong>en</strong>ched excitonpeak under high magnetic field. This unveils an unusualring-shaped val<strong>en</strong>ce band maximum with a small hole effectivemass.M. Millot, S. George and J.M. BrotoA. Segura (ICMUV, Val<strong>en</strong>cia, Spain)46
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2009Biology, Chemistry and Soft Mat
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BIOLOGY, CHEMISTRY AND SOFT MATTER
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2009 APPLIED SUPERCONDUCTIVITYMagne
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2009 APPLIED SUPERCONDUCTIVITYPhtha
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2009Magneto-Science105
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MAGNETO-SCIENCE 2009Study of the in
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MAGNETO-SCIENCE 2009Magnetohydrodyn
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MAGNETO-SCIENCE 2009112
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2009 MAGNET DEVELOPMENT AND INSTRUM
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2009 MAGNET DEVELOPMENT AND INSTRUM
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2009 MAGNET DEVELOPMENT AND INSTRUM
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2009 MAGNET DEVELOPMENT AND INSTRUM
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2009 MAGNET DEVELOPMENT AND INSTRUM
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2009 PROPOSALSProposals for Magnet
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2009 PROPOSALSSpin-Jahn-Teller effe
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2009 PROPOSALSQuantum Oscillations
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2009 PROPOSALSThermoelectric tensor
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2009 PROPOSALSDr. EscoffierCyclotro
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2009 PROPOSALSHigh field magnetotra
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2009 THESESPhD Theses 20091. Nanot
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2009 PUBLICATIONS[21] O. Drachenko,
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2009 PUBLICATIONS[75] S. Nowak, T.
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Contributors of the LNCMI to the Pr
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Institut Jean Lamour, Nancy : 68Ins
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Lawrence Berkeley National Laborato