Electronic Material Properties - und Geowissenschaften ...
Electronic Material Properties - und Geowissenschaften ...
Electronic Material Properties - und Geowissenschaften ...
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In case of the <strong>und</strong>oped sintered B6O sample, the individual B6O grains are typically well<br />
faceted with sharp edges. The grain-size distribution in this sample is bimodal with<br />
larger grains (1-2 µm) embedded in a fine-grain B6O matrix. All B6O grains typically<br />
reveal numerous stacking faults (similar to B4C particles). In the case of the doped,<br />
sintered B6O sample, the grain size was greatly increased (by a factor of about 5x).<br />
Stacking faults are a common feature of this B6O material even upon long-term anneal.<br />
A secondary phase formation was observed in the Al-containing sample. With respect to<br />
the phase diagram, the two aluminium borate compo<strong>und</strong>s that are most likely to form<br />
upon sintering are Al4B2O9 and/or Al18B4O33.<br />
Conventional TEM (bright field; Figure 3) and HRTEM (Figure 4) were performed on the<br />
crystalline secondary phase in addition to selected area electron diffraction (SAD). The<br />
diffraction pattern given in Figure 4 can be indexed corresponding to a primitive<br />
orthorhombic unit cell (a,b = 0.7617 and c = 0.2827 nm; Pbma) as well as with respect<br />
to an A-centered orthorhombic symmetry (Amam). EDS analysis does not allow the<br />
distinction between both phases, because this technique is rather insensitive to boron<br />
(no quantitative analysis possible). The A-centered phase; however, should follow the<br />
extinction rules (k+l=2n). Under the assumption that the rather weak {010}-type<br />
reflections visible in the SAD-pattern<br />
(Figure 4) are a result from 2 nd -order Laue<br />
reflections, it is concluded that extinction<br />
occurs. Therefore, the secondary crystalline<br />
Al-compo<strong>und</strong> observed in this material is<br />
the Al18B4O33 phase. It should be noted that<br />
the secondary phase shows an identical<br />
orientation within an area of 20-50 microns<br />
within the sample. This observation<br />
indicates that this Al-phase is characterized<br />
by a rather low nucleation rate, which is<br />
uncommon for most secondary phases.<br />
Fig. 3: TEM image of the secondary Al-phase,<br />
Al18B4O33, observed in the doped, sintered B6O<br />
sample.<br />
Fig. 4: HRTEM image of the secondary Alphase<br />
present in B6O. Note the presence of<br />
stacking faults as well the weak reflections in<br />
the SAD pattern (extinction).<br />
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