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Electronic Material Properties - und Geowissenschaften ...

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Fig. 2 shows the time dependencies for the charging currents IC (a), surface potentials VS<br />

(b) and the light intensities ∆Ilight (c) for a single ePTFE film at grid voltages ranging from<br />

−500 to −1500 V. As soon as the applied electric field exceeds a threshold value of -700 V<br />

the film starts to emit light. The light emission is accompanied by a charging current IC and<br />

a buildup of surface potential VS. After 5 s the current IC, the surface potential VS and the<br />

light emission ∆Ilight saturate to non-zero values. The constant current can be explained by<br />

an equivalent circuit model consisting of the sample capacitor and a leakage resistor in<br />

parallel. The leakage current (saturated current IC) is caused by charge transport initiated<br />

by ongoing local breakdowns. Hence, the charge carriers generated in the material voids<br />

must permanently vanish during the poling process, most likely due to ejection at the metal<br />

electrode and neutralization of corona induced charges at the ePTFE top surface. As a<br />

consequence, the surface charge potential does not change for grid voltages VG < −700 V<br />

[4].<br />

I C , [µA]<br />

V S , [ V ]<br />

∆I light , [a.u.]<br />

0,00<br />

-0,05<br />

-0,10<br />

-0,15<br />

-0,20<br />

-800<br />

-600<br />

-400<br />

-200<br />

0<br />

2,0<br />

1,5<br />

1,0<br />

0,5<br />

0,0<br />

a)<br />

0 5 10 15 20<br />

b) -700... -1500V<br />

0 5 10 15 20<br />

c)<br />

0 5 10 15 20<br />

t 1<br />

-500V<br />

-700V<br />

-800V<br />

-900V<br />

-1000V<br />

-1250V<br />

-1500V<br />

-500V<br />

-1500V<br />

-1250V<br />

-1000V<br />

-900V<br />

-800V<br />

-700V<br />

-500V<br />

time, [sec]<br />

Figure 2. Time dependencies of charging currents (a),<br />

surface potentials (b) and light intensities (c)<br />

during negative poling of an individual ePTFE film<br />

at different grid voltages as indicated.<br />

I C , [µΑ]<br />

V S , [ V ]<br />

∆I light , [a.u.]<br />

0,00<br />

-0,05<br />

-0,10<br />

-0,15<br />

-2000<br />

-1000<br />

0<br />

3<br />

2<br />

1<br />

0<br />

a)<br />

0 25 50 75<br />

b)<br />

0 25 50 75<br />

t 1<br />

c)<br />

0 25 50 75<br />

time, [sec]<br />

Figure 3. Time dependencies of charging currents (a),<br />

surface potentials (b) and light intensities (c)<br />

during negative poling of three-layer sandwich at<br />

grid voltage of -2500 V.<br />

In the contrary to the results obtained from single ePFTE films, the light intensity ∆Ilight and<br />

the charging current IC detected during the poling of the sandwich structure exhibit initially<br />

maxima and decay with time to zero. This is depicted in Fig. 3. Time t1 indicates the onset<br />

of light emission. Concomitantly, the saturated surface potential coincides for all applied<br />

grid voltage with VG. Due to the blocking character of the FEP films, on can anticipate that<br />

the positive and negative charges generated during breakdown are trapped at opposite<br />

- 68 -

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