Electronic Material Properties - und Geowissenschaften ...
Electronic Material Properties - und Geowissenschaften ...
Electronic Material Properties - und Geowissenschaften ...
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Relative density<br />
1.00<br />
0.95<br />
0.90<br />
0.85<br />
0.80<br />
0.75<br />
0.70<br />
1300°C<br />
1150°C<br />
Film exp. Film model<br />
Bulk<br />
0.65<br />
0 2000 4000 6000 8000 10000<br />
Isothermal time [s]<br />
Fig 1. Experiment and modelled densification curves for 2 sintering temperatures<br />
The effect of film thickness was also investigated. Thinner layers seem to be more<br />
constrained, as they densify more slowly than thicker ones. Particle rearrangement may be<br />
hindered close to the substrate, which leads to a lower local density than elsewhere in the<br />
film (Fig 2).<br />
Fig. 2 Polished cross-section of a sintered film<br />
Finally, an extension of the sintering model to anisotropic bodies has been proposed. In<br />
the case of transverse isotropy, 2 free sintering strain rates, 2 uniaxial viscosity as well as<br />
3 viscous Poisson’s ratios are introduced. In specific cases, such as constrained sintering,<br />
only 2 Poisson’s ratios are required. The experimental determination of these parameters<br />
is still challenging, as anisotropic specimens have to be obtained before being loaded in<br />
different directions and their strains measured.<br />
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