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Electronic Material Properties - und Geowissenschaften ...

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synthesis and analysis of interfaces with different contact phases.<br />

The <strong>und</strong>ulator beamline U49/2-PGM2 operated by<br />

our “Collaborating Research Group” BTU Cottbus-<br />

HMI-TU Darmstadt, supplies photon energies in<br />

the range from 90 eV to 1400 eV, and thus core<br />

level emissions as well as valence electronic<br />

structures can be studied in high resolution as<br />

illustrated in Figure 3. Photoelectron spectra of<br />

differently modified silicon surfaces in the valence<br />

band and the C 1s core level regions are shown.<br />

The direct bonding of the terminator group to<br />

surface Si atoms is evidenced by the characteristic emission from the Si-C bond orbital (or<br />

analogously the Si-H bond) at aro<strong>und</strong> 5 eV. Another characteristic feature of direct Si-C<br />

linkage (in contrast to carboxylic bonding Si-O-C) is the low binding energy component CSi<br />

at aro<strong>und</strong> 284.3 eV (silicon-bo<strong>und</strong> carbon) in the C 1s emission. The second component<br />

CCH2 at 285.0 eV is related to C-C or C-H bonded, aliphatic species. With increasing alkyl<br />

chain length the intensity of the aliphatic component increases. For ethylated Si(111), the<br />

ratio CCH2 / CSi is about 1:1, for butylated Si 1:3 in accordance with expectations. As<br />

mentioned above, based on a careful intensity study, the CH3 termination appears as the<br />

only one to achieve 100 % surface termination.<br />

Fig. 2: LEED pattern of Si(111)-C2H5<br />

In addition to alkylated surfaces, aryl-functionalizations of Si(111) by for example<br />

nitrobenzene or bromobenzene were studied. These systems are interesting for surface<br />

engineering because it could be shown that the molecular dipoles grafted onto the Si(111)<br />

surface affect a surface dipole layer which modifies the silicon surface potential. In our<br />

ongoing research project, the interface engineering possibilities of such alkyl-or arylmodified<br />

surfaces in contact with electrolytes and organic or inorganic semiconductors will<br />

be further investigated.<br />

C1s<br />

hn = 650 eV<br />

C x H y<br />

C CH2<br />

C Si<br />

288 287 286 285 284 283<br />

binding energy (eV)<br />

Butyl-Si<br />

Ethyl-Si<br />

Methyl-Si<br />

H-Si<br />

hn = 150 eV<br />

C 2s<br />

σ Si-C<br />

σ Si-H<br />

20 15 10 5 0<br />

binding energy (eV)<br />

Figure 3: Photoelectron spectra of various alkylated Si(111) surfaces. The direct Si-C linkage is<br />

evidenced by the the surface state emission from the Si-C bond orbital and the low BE component<br />

in the C 1s emission (“CSi”), which is associated with silicon-bo<strong>und</strong> aliphatic carbon. “CCH2”<br />

corresponds to aliphatic, only C-C and C-H coordinated carbon.<br />

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