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a) b - École Polytechnique de Montréal

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<strong>de</strong>posited PANI layers increases until a saturation plateau is reached at approximately 32 layers.<br />

The conductive porous polymer <strong>de</strong>vice <strong>de</strong>veloped in this study is sensitive to applied<br />

compression providing that the void volume percentage is sufficiently high. Higher loads result<br />

in higher conductivity values with values as high as 10 -3 S cm -1 obtained. Although this approach<br />

has been <strong>de</strong>monstrated here for an ultra-low surface area porous substrate, high surface area<br />

substrates can also be readily prepared.<br />

5.6 Acknowledgements<br />

The authors express appreciation to the Natural Sciences and Engineering Research Council of<br />

Canada for supporting this work. They also thank F. Normandin from the Institut <strong>de</strong>s matériaux<br />

industriels for his assistance with the conductivity measurements of the samples.<br />

5.7 References<br />

(1) Heywang, G.; Jonas, F. Advanced Materials 1992, 4, 116.<br />

(2) Roman, L. S.; An<strong>de</strong>rsson, M. R.; Yohannes, T.; Inganás, O. Advanced Materials 1997, 9,<br />

1164.<br />

(3) Kraft, A.; Grimsdale, Andrew C.; Holmes, Andrew B. Angewandte Chemie 1998, 110,<br />

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(7) Kaneto, K.; Kaneko, M.; Min, Y.; MacDiarmid, A. G. Synthetic Metals 1995, 71, 2211.<br />

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H.; Burns, P. L.; Holmes, A. B. Nature 1990, 347, 539.<br />

(9) Margolis, J. M. Conductive Polymers and Plastics; Chapman and Hall: New York, 1989.<br />

(10) Halls, J. J. M.; Walsh, C. A.; Greenham, N. C.; Marseglia, E. A.; Friend, R. H.; Moratti,<br />

S. C.; Holmes, A. B. Nature 1995, 376, 498.<br />

(11) Tessler, N.; Denton, G. J.; Friend, R. H. Nature 1996, 382, 695.<br />

(12) Garnier, F.; Hajlaoui, R.; Yassar, A.; Srivastava, P. Science 1994, 265, 1684.<br />

(13) Zasadzinski, J. A.; Viswanathan, R.; Madsen, L.; Garnaes, J.; Schwartz, D. K. Science<br />

1994, 263, 1726.<br />

(14) Maoz, R.; Frydman, E.; Cohen, S. R.; Sagiv, J. Advanced Materials 2000, 12, 424.<br />

169

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