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research activities in 2007 - CSEM

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In order to optimize the performances of the resonator and<br />

guarantee long-term frequency stability, one needs to perform<br />

hermetic packag<strong>in</strong>g under reduced pressure. The rear side of<br />

the resonators is closed hermetically by low temperature<br />

fusion bond<strong>in</strong>g (with Si wafer) or by anodic bond<strong>in</strong>g (with<br />

Pyrex). Both methods require an extremely smooth surface of<br />

the wafer.<br />

The resonator chips are then vacuum encapsulated us<strong>in</strong>g<br />

silicon caps (ultimately work<strong>in</strong>g ICs) and AuSn (80% wt Au)<br />

solder<strong>in</strong>g technology. Metallic alloy materials provide both<br />

low-permeability seal<strong>in</strong>g characteristics as well as electrical<br />

conduction for the resonator driv<strong>in</strong>g <strong>in</strong>terconnects. The AuSn<br />

electroplat<strong>in</strong>g process was carried out at the Fraunhofer<br />

Institute for Reliability and Micro<strong>in</strong>tegration (IZM FhG).<br />

Vacuum seal<strong>in</strong>g of the resonator chips is done through a twostep<br />

process:<br />

• Tack<strong>in</strong>g of the seal<strong>in</strong>g cap on the resonator chip at a<br />

temperature below the AuSn melt<strong>in</strong>g po<strong>in</strong>t us<strong>in</strong>g flip-chip<br />

• Reflow under vacuum <strong>in</strong> a dedicated oven<br />

The tack<strong>in</strong>g methodology proved to be successful. Taguchi<br />

runs us<strong>in</strong>g thermo-compression parameters (temperature,<br />

force, dwell<strong>in</strong>g time) as variable experimental factors were<br />

carried out.<br />

Reflow process development, where result<strong>in</strong>g vacuum level is<br />

monitored through Q factor measurements, is on-go<strong>in</strong>g.<br />

A differential oscillator structure has been chosen to m<strong>in</strong>imize<br />

the circuit power dissipation despite the large shunt<br />

capacitance of the resonator (~10 pF). A programmable<br />

fractional divider is used to generate a thermally compensated<br />

32768 Hz clock from the 960 kHz oscillator signal that drifts by<br />

-28 ppm/°C. The output of a high resolution temperature<br />

sensor <strong>in</strong>tegrated on the same die is used by a sequencer to<br />

implement an open-loop compensation algorithm that requires<br />

<strong>in</strong>itial calibration of the resonator absolute frequency and<br />

thermal drift. The state mach<strong>in</strong>e has been implemented on an<br />

external FPGA to yield greater flexibility. Communication with<br />

the IC to read the thermal sensor <strong>in</strong>dication and update the<br />

fractional divider ratio is ensured via a serial bus <strong>in</strong>terface.<br />

Figure 4 shows a photograph of a m<strong>in</strong>iature packaged<br />

resonator that has been glued above the IC mounted over a<br />

pr<strong>in</strong>ted circuit board. The close vic<strong>in</strong>ity of the resonator and<br />

the thermal sensor located with<strong>in</strong> the IC m<strong>in</strong>imize any thermal<br />

gradient that would affect the compensation accuracy.<br />

Extensive test<strong>in</strong>g of the IC with the m<strong>in</strong>iature packaged<br />

resonators will be <strong>in</strong>itiated once satisfactory vacuum levels are<br />

reached with<strong>in</strong> the micro-cavity to assess the performance of<br />

the thermo-compensated time-base.<br />

Figure 4: Photograph show<strong>in</strong>g a chip on board assembly of a<br />

m<strong>in</strong>iature time-base<br />

[1] J. Baborowski, et al., “Piezoelectrically Activated Silicon<br />

Resonators”, IEEE Frequency Control Symposium, 1210-1213<br />

(June <strong>2007</strong>)<br />

[2] B. Kim, et al., “Si-SiO2 Composite MEMS Resonators <strong>in</strong> CMOS<br />

Compatible Wafer-Scale Th<strong>in</strong>-Film Encapsulation”, IEEE<br />

Frequency Control Symposium, 1214-1219 (June <strong>2007</strong>)<br />

[3] J.M. Mayor, et al., “Micro-Vibration Analysis Setup for MEMS<br />

and MOEMS Characterization”, <strong>in</strong> this report, page 72<br />

17

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