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handbook of carbon, graphite, diamond and fullerenes

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Pyrolytic Graphite 161<br />

Table 7.3. Properties <strong>of</strong> Isotropic Pyrolytic Carbon at 25°C (as deposited)<br />

Density, g/cm 3<br />

Vickers DPH* hardness,<br />

kg/mm 2<br />

Flexural strength, MPa<br />

Young's modulus, GPa<br />

Strain to failure, %<br />

2.1<br />

240 - 370<br />

350<br />

28<br />

1.2<br />

* DPH: <strong>diamond</strong> pyramid hardness<br />

Gas Permeability. Isotropic pyrolytic <strong>carbon</strong> provides a better barrier<br />

to gases than the more crystalline pyrolytic <strong>graphite</strong>s.! 261 The permeability,<br />

K, is as follows:<br />

Isotropic pyrolytic <strong>carbon</strong>: 10 6 to 10 15 cm 2 s<br />

Pyrolytic <strong>graphite</strong>: 10 2 to about 10 cm 2 s<br />

5.0 APPLICATIONS OF PYROLYTIC GRAPHITE AND CARBON<br />

5.1 High-temperature Containers <strong>and</strong> Other Free-St<strong>and</strong>ing Products<br />

Containers <strong>and</strong> otherfree-st<strong>and</strong>ing (monolithic) parts are produced by<br />

depositing the pyrolytic <strong>carbon</strong> or <strong>graphite</strong> onto a <strong>graphite</strong> m<strong>and</strong>rel. After<br />

the deposition is completed, the m<strong>and</strong>rel is removed, usually by machining.<br />

It is difficult to deposit pyrolytic <strong>graphite</strong> in shapes having sharp radii<br />

without interlayer delaminations. These delaminations are caused by the<br />

stresses generated by the considerable differences in the thermal expansion<br />

in the ab <strong>and</strong> c directions which can overcome the low interlaminar<br />

strength. These delaminations do not occur with isotropic pyrolytic <strong>carbon</strong>.<br />

Common applications <strong>of</strong> pyrolytic <strong>graphite</strong> are:<br />

• Boats, <strong>and</strong> crucibles for liquid-phase epitaxy<br />

• Crucibles for molecular-beam epitaxy<br />

• Reaction vessels for the gas-phase epitaxy <strong>of</strong> Ill-V<br />

semiconductor materials such as gallium arsenide<br />

• Trays for silicon-wafer h<strong>and</strong>ling

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