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handbook of carbon, graphite, diamond and fullerenes

handbook of carbon, graphite, diamond and fullerenes

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Diamond-Like Carbon 347<br />

The resulting coating can be a-C:H or a s<strong>of</strong>t polymer-like <strong>graphite</strong><br />

depending on the applied energy. Deposition rate is 0.5 to 2/jm/hr. Aclean<br />

deposition surface is obtained by chemically etching the substrate followed<br />

by sputter cleaning with argon just prior to the actual deposition.<br />

Since a solid <strong>carbon</strong> target is not needed <strong>and</strong> the <strong>carbon</strong> source is a<br />

gas, greater flexibility is possible in the positioning <strong>and</strong> geometry <strong>of</strong> the<br />

substrate(s) as a coating is deposited on every surface exposed to the gas<br />

(as opposed to sputtering which is essentially a line-<strong>of</strong>-sight process).<br />

Unlike the purely PVD process, large parts can be coated (as long as they<br />

can be electrically contacted) with present production equipment. 11 ^<br />

Deposition by Ion-Beam Activation. A typical ion-beam activated<br />

system has a 30 cm hollow-cathode ion source with its optics masked to 10<br />

cm. Argon is introduced to establish the discharge followed by methane in<br />

a 28/100 ratio <strong>of</strong> methane molecules to argon atoms. The energy level is<br />

100 eV, the acceleration voltage is 600 V, <strong>and</strong> the resulting deposition rate<br />

is 0.5/mi/h.<br />

A similar system has a dual ion-beam. A primary beam sputters<br />

<strong>carbon</strong> while the growing film is being simultaneously bombarded with<br />

argon ions generated from a second ion source J 18 1 Another system is based<br />

on a microwave discharge generated by electron cyclotron resonance<br />

(ECR)J 19 H 20 ) The principle <strong>of</strong> ECR is described in Ch. 13, Sec. 3.3.<br />

3.4 Substrate Heating<br />

Under normal circumstances during deposition by high-frequency<br />

discharge, the substrate remains at low temperature (

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