Physical Principles of Electron Microscopy: An Introduction to TEM ...
Physical Principles of Electron Microscopy: An Introduction to TEM ...
Physical Principles of Electron Microscopy: An Introduction to TEM ...
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<strong>TEM</strong> Specimens and Images 113<br />
core, in order <strong>to</strong> accommodate the extra “half-plane” <strong>of</strong> a<strong>to</strong>ms. Because the<br />
Bragg angles for electron diffraction are small, it is likely that, at some<br />
places within this strained region, the bending causes the angle between an<br />
a<strong>to</strong>mic plane and the incident beam <strong>to</strong> become approximately equal <strong>to</strong> the<br />
Bragg angle �B . At such locations, electrons are strongly diffracted, and<br />
most <strong>of</strong> these scattered electrons will be absorbed at the <strong>TEM</strong> objective<br />
aperture. Consequently, the dislocation appears dark in the <strong>TEM</strong> image, as<br />
shown in Fig. 4-15.<br />
Because they are mobile, dislocations play an important role in the<br />
deformation <strong>of</strong> metals by applied mechanical stress. Although they had been<br />
predicted <strong>to</strong> explain a discrepancy between the measured and theoretical<br />
strengths <strong>of</strong> metals, <strong>TEM</strong> images provided the first direct evidence for the<br />
existence and morphology (shape) <strong>of</strong> dislocations; see Fig. 1-11 on p. 14.<br />
� i<br />
P<br />
Figure 4-14. Bending <strong>of</strong> the a<strong>to</strong>mic planes around an edge dislocation, whose direction runs<br />
perpendicular <strong>to</strong> the plane <strong>of</strong> the diagram. At points P, the angle <strong>of</strong> incidence �i is equal <strong>to</strong> the<br />
Bragg angle <strong>of</strong> the incident electrons, which are therefore strongly diffracted.<br />
Figure 4-15. Dislocations and a stacking fault in cobalt metal. The dislocations appear as<br />
curved dark lines running through the crystal, whereas the stacking fault is represented by a<br />
series <strong>of</strong> almost-parallel interference fringes. (The specimen thickness is slightly less on the<br />
left <strong>of</strong> the picture, resulting in a reduction in the projected width <strong>of</strong> the stacking fault.)<br />
Courtesy <strong>of</strong> Pr<strong>of</strong>. S. Sheinin, University <strong>of</strong> Alberta.<br />
P