Physical Principles of Electron Microscopy: An Introduction to TEM ...
Physical Principles of Electron Microscopy: An Introduction to TEM ...
Physical Principles of Electron Microscopy: An Introduction to TEM ...
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152 Chapter 5<br />
One example <strong>of</strong> this process is electron-beam contamination (Section 3.6), in<br />
which hydrocarbon molecules adsorbed on<strong>to</strong> a surface are polymerized in<strong>to</strong><br />
a material <strong>of</strong> high molecular weight that is impossible <strong>to</strong> remove by most<br />
solvents. Once again, this generally-unwanted effect can be put <strong>to</strong> good use,<br />
by using the polymerized layer as an ion-beam resist; see Fig. 5-22. As in<br />
case <strong>of</strong> positive resists, many types <strong>of</strong> negative resist are commercially<br />
available. The choice <strong>of</strong> the <strong>to</strong>ne (negative or positive) and the chemical<br />
nature <strong>of</strong> the resist are dictated by the application.<br />
Figure 5-22. (a) Hydrocarbon-contamination line written on<strong>to</strong> a thin substrate by scanning a<br />
focused probe <strong>of</strong> 200-keV electrons. (b) A broader line transferred <strong>to</strong> polycrystalline bismuth<br />
by argon-ion etching. The arrow indicates the position <strong>of</strong> a grain boundary in the bismuth.<br />
Courtesy <strong>of</strong> M. Malac, National Institute <strong>of</strong> Nanotechnology, Canada.<br />
Figure 5-23. (a) Central region <strong>of</strong> a zone plate, fabricated by e-beam lithography and imaged<br />
with secondary electrons. Bright rings are <strong>to</strong>pographical contrast due <strong>to</strong> the step between bare<br />
Si substrate and PMMA-covered Si, but weak materials contrast is also present: the bare Si<br />
appears brighter because <strong>of</strong> its higher backscattering coefficient, giving a larger SE2 signal.<br />
(b) Outer region <strong>of</strong> the zone plate, where the spatial resolution and accuracy <strong>of</strong> the pattern<br />
represent an engineering challenge. Courtesy <strong>of</strong> Peng Li and Mirwais Aktary, Applied<br />
Nano<strong>to</strong>ols Inc., Edmon<strong>to</strong>n, Canada.