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Physical Principles of Electron Microscopy: An Introduction to TEM ...

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124 Chapter 4<br />

The procedures outlined in Fig. 4-20 yield plan-view images, in which<br />

the sample is viewed perpendicular <strong>to</strong> its original surface. For some<br />

purposes, a cross-sectional image is needed, for example <strong>to</strong> show the growth<br />

mechanism <strong>of</strong> a film. The required specimen is made by using a diamond<br />

wheel <strong>to</strong> cut the film (on its substrate) in<strong>to</strong> several thin strips, which are then<br />

turned through 90 degrees about their long axis and glued <strong>to</strong>gether by epoxy<br />

cement. Dimple grinding followed by ion milling then produces a specimen<br />

that is thin at the center, resulting in a <strong>TEM</strong> image <strong>of</strong> the substrate and film<br />

seen in cross section.<br />

Cross-sectional specimens are invaluable for analyzing problems that<br />

arise in the manufacture <strong>of</strong> integrated circuits on a silicon chip. As device<br />

sizes shrink, it becomes necessary <strong>to</strong> make use <strong>of</strong> the high spatial resolution<br />

<strong>of</strong> the <strong>TEM</strong> for this kind <strong>of</strong> failure analysis. The problem <strong>of</strong> producing a<br />

cross section containing a specific component is solved by using a FIB<br />

machine, in which Ga+ ions are focused (by electrostatic lenses) in<strong>to</strong> a beam<br />

as small as 10 nm in diameter. The machine produces a scanned image <strong>of</strong> the<br />

surface <strong>of</strong> the chip, allowing the ion beam <strong>to</strong> be precisely positioned and<br />

then scanned in a line in order <strong>to</strong> cut in<strong>to</strong> the silicon on either side <strong>of</strong> the<br />

component. This leaves a slice only 100 nm in thickness, which is then lifted<br />

out and viewed in cross section in the <strong>TEM</strong>, as in Fig. 4-21.

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