Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru
Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru
Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru
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Low-Temperature Conduction of a <strong>Quantum</strong> Dot 101<br />
Hint = EC ˆ N 2 − ES ˆ S 2 + Λ (2/β − 1) ˆ T † ˆ T (10)<br />
of the interaction part of the Hamil<strong>to</strong>nian of the dot. Here<br />
ˆN = �<br />
d † nsdns ,<br />
�<br />
S ˆ = d † σss<br />
ns<br />
′<br />
2 dns ′ �<br />
T ˆ =<br />
ns<br />
nss ′<br />
d<br />
n<br />
†<br />
n↑d† n↓ (11)<br />
are the opera<strong>to</strong>rs of the <strong>to</strong>tal number of electrons in the dot, of the dot’s<br />
spin, and the “pair creation” opera<strong>to</strong>r corresponding <strong>to</strong> the interaction in the<br />
Cooper channel.<br />
Thefirsttermin(10) represents the electrostatic energy. In the conventional<br />
equivalent circuit picture, see Fig. 1, the charging energy EC is relat<strong>ed</strong><br />
<strong>to</strong> the <strong>to</strong>tal capacitance C of the dot, EC = e2 /2C. For a mesoscopic<br />
(kF L ≫ 1) conduc<strong>to</strong>r, the charging energy is large compar<strong>ed</strong> <strong>to</strong> the mean<br />
level spacing δE. Inde<strong>ed</strong>, using the estimates C ∼ κL and (3) and (5), we find<br />
√<br />
EC/δE ∼ L/a0 ∼ rs N. (12)<br />
Except an exotic case of an extremely weak interaction, this ratio is large<br />
for N ≫ 1; for the smallest quantum <strong>dots</strong> form<strong>ed</strong> in GaAs heterost<strong>ru</strong>ctures,<br />
EC/δE ∼ 10 [3]. Note that (4), (6), and (12) imply that<br />
ET /EC ∼ 1/rs � 1 ,<br />
which justifies the use of RMT for the description of single-particle states with<br />
energies |ɛn| � EC, relevant for Coulomb blockade.<br />
GL<br />
L dot<br />
R<br />
CL<br />
GR<br />
CR<br />
Cg<br />
VL Vg VR<br />
Fig. 1. Equivalent circuit for a quantum dot connect<strong>ed</strong> <strong>to</strong> two leads by tunnel<br />
junctions and capacitively coupl<strong>ed</strong> <strong>to</strong> the gate electrode. The <strong>to</strong>tal capacitance of<br />
the dot C = CL + CR + Cg<br />
The second term in (10) describes the intra-dot exchange interaction, with<br />
the exchange energy ES given by<br />
�<br />
ES = dr dr ′ U(r − r ′ )F 2 (|r − r ′ |) (13)<br />
In the case of a long-range interaction the potential U here should properly<br />
account for the screening [20]. For rs ≪ 1 the exchange energy can be estimat<strong>ed</strong><br />
with logarithmic accuracy by substituting U(r) =(e 2 /κr)θ(a0 −r) in<strong>to</strong>