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Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru

Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru

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V R (V)<br />

V R (V)<br />

Semiconduc<strong>to</strong>r Few-Electron <strong>Quantum</strong> Dots as Spin Qubits 57<br />

a<br />

-0.95<br />

weak coupling<br />

00<br />

a<br />

b<br />

-1.00<br />

interm<strong>ed</strong>iate coupling<br />

00 b<br />

-0.90<br />

-0.85<br />

-1.10<br />

-1.05<br />

-1.00<br />

c<br />

-0.85 -0.90 -0.95<br />

V L (V)<br />

strong coupling<br />

-1.00 -1.05 -1.10<br />

V L (V)<br />

c<br />

00<br />

-0.95<br />

-0.90<br />

-0.90 -0.95 -1.00 -1.05<br />

V L (V)<br />

Fig. 19. Controlling the inter-dot coupling (in sample 2) with VM . These charge<br />

stability diagrams of the double quantum dot are measur<strong>ed</strong> using the QPC on the<br />

left. A small modulation (3 mV at 235 Hz) is appli<strong>ed</strong> <strong>to</strong> gate PR,anddIQP C/dVPR<br />

is measur<strong>ed</strong> with a lock-in amplifier and plott<strong>ed</strong> in grayscale versus VL and VR. A<br />

magnetic field of 6 Tesla is appli<strong>ed</strong> in the plane of the 2DEG. (a) Weak-coupling<br />

regime. VM is such that all dark lines indicating charge transitions are straight.<br />

The tunnel-coupling between the two <strong>dots</strong> is therefore negligible compar<strong>ed</strong> <strong>to</strong> the<br />

capacitive coupling. (b) Interm<strong>ed</strong>iate-coupling regime. VM is 0.07 V less negative<br />

than in (a), such that lines in the bot<strong>to</strong>m left corner are slightly curv<strong>ed</strong>. This signifies<br />

that here the inter-dot tunnel-coupling is comparable <strong>to</strong> the capacitive coupling.<br />

(c) Strong-coupling regime. VM is 0.1 V less negative than in (b), such that all<br />

lines are very curv<strong>ed</strong>. This implies that the tunnel-coupling is dominating over the<br />

capacitive coupling and the double dot behaves as a single dot

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