Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru
Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru
Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru
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V R (V)<br />
V R (V)<br />
Semiconduc<strong>to</strong>r Few-Electron <strong>Quantum</strong> Dots as Spin Qubits 57<br />
a<br />
-0.95<br />
weak coupling<br />
00<br />
a<br />
b<br />
-1.00<br />
interm<strong>ed</strong>iate coupling<br />
00 b<br />
-0.90<br />
-0.85<br />
-1.10<br />
-1.05<br />
-1.00<br />
c<br />
-0.85 -0.90 -0.95<br />
V L (V)<br />
strong coupling<br />
-1.00 -1.05 -1.10<br />
V L (V)<br />
c<br />
00<br />
-0.95<br />
-0.90<br />
-0.90 -0.95 -1.00 -1.05<br />
V L (V)<br />
Fig. 19. Controlling the inter-dot coupling (in sample 2) with VM . These charge<br />
stability diagrams of the double quantum dot are measur<strong>ed</strong> using the QPC on the<br />
left. A small modulation (3 mV at 235 Hz) is appli<strong>ed</strong> <strong>to</strong> gate PR,anddIQP C/dVPR<br />
is measur<strong>ed</strong> with a lock-in amplifier and plott<strong>ed</strong> in grayscale versus VL and VR. A<br />
magnetic field of 6 Tesla is appli<strong>ed</strong> in the plane of the 2DEG. (a) Weak-coupling<br />
regime. VM is such that all dark lines indicating charge transitions are straight.<br />
The tunnel-coupling between the two <strong>dots</strong> is therefore negligible compar<strong>ed</strong> <strong>to</strong> the<br />
capacitive coupling. (b) Interm<strong>ed</strong>iate-coupling regime. VM is 0.07 V less negative<br />
than in (a), such that lines in the bot<strong>to</strong>m left corner are slightly curv<strong>ed</strong>. This signifies<br />
that here the inter-dot tunnel-coupling is comparable <strong>to</strong> the capacitive coupling.<br />
(c) Strong-coupling regime. VM is 0.1 V less negative than in (b), such that all<br />
lines are very curv<strong>ed</strong>. This implies that the tunnel-coupling is dominating over the<br />
capacitive coupling and the double dot behaves as a single dot