Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru
Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru
Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru
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40 J.M. Elzerman et al.<br />
a<br />
T-<br />
T0 T +<br />
S<br />
∆EZ ∆EZ EST b<br />
Energy<br />
N =1 N =2<br />
∆E Z<br />
Electrochemical potential<br />
/<br />
/<br />
↑↔T0<br />
↓↔T-<br />
↑↔T+<br />
↓↔T0<br />
↑↔S<br />
↓↔S<br />
N=1↔2 E ST<br />
∆E Z<br />
∆E Z<br />
Fig. 10. One- and two-electron states and transitions at finite magnetic field. (a)Energy<br />
diagram for a fix<strong>ed</strong> gate voltage. By changing the gate voltage, the one-electron<br />
states (below the dash<strong>ed</strong> line) shift up or down relative <strong>to</strong> the two-electron states<br />
(above the dash<strong>ed</strong> line). The six transitions that are allow<strong>ed</strong> (i.e. not spin-block<strong>ed</strong>)<br />
are indicat<strong>ed</strong> by vertical arrows. (b) Electrochemical potentials for the transitions<br />
between one- and two-electron states. The six transitions in (a) correspond <strong>to</strong> only<br />
four different electrochemical potentials. By changing the gate voltage, the whole<br />
ladder of levels is shift<strong>ed</strong> up or down<br />
tunnelling between the <strong>dots</strong>, with tunnelling matrix element t, ε0 (the “bonding<br />
state”) and ε1 (the “anti-bonding state”) are split by an energy 2t. By<br />
filling the two states with two electrons, we again get a spin singlet ground<br />
state and a triplet first excit<strong>ed</strong> state (at zero field). However, the singlet<br />
ground state is not purely S (Fig. 9a), but also contains a small admixture of<br />
the excit<strong>ed</strong> singlet S2 (Fig. 9f). The admixture of S2 depends on the competition<br />
between inter-dot tunnelling and the Coulomb repulsion, and serves <strong>to</strong><br />
lower the Coulomb energy by r<strong>ed</strong>ucing the double occupancy of the <strong>dots</strong> [33].<br />
If we focus only on the singlet ground state and the triplet first excit<strong>ed</strong><br />
states, then we can describe the two spins S1 and S2 by the Heisenberg<br />
Hamil<strong>to</strong>nian, H = JS1 · S2. Due <strong>to</strong> this mapping proc<strong>ed</strong>ure, J is now defin<strong>ed</strong><br />
as the energy difference between the triplet state T0 and the singlet ground<br />
state, which depends on the details of the double dot orbital states. From a<br />
Hund-Mulliken calculation [34], J is approximately given by 4t 2 /U +V , where<br />
U is the on-site charging energy and V includes the effect of the long-range<br />
Coulomb interaction. By changing the overlap of the wavefunctions of the<br />
two electrons, we can change t and therefore J. Thus, control of the interdot<br />
tunnel barrier would allow us <strong>to</strong> perform operations such as swapping or<br />
entangling two spins.