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Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru

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40 J.M. Elzerman et al.<br />

a<br />

T-<br />

T0 T +<br />

S<br />

∆EZ ∆EZ EST b<br />

Energy<br />

N =1 N =2<br />

∆E Z<br />

Electrochemical potential<br />

/<br />

/<br />

↑↔T0<br />

↓↔T-<br />

↑↔T+<br />

↓↔T0<br />

↑↔S<br />

↓↔S<br />

N=1↔2 E ST<br />

∆E Z<br />

∆E Z<br />

Fig. 10. One- and two-electron states and transitions at finite magnetic field. (a)Energy<br />

diagram for a fix<strong>ed</strong> gate voltage. By changing the gate voltage, the one-electron<br />

states (below the dash<strong>ed</strong> line) shift up or down relative <strong>to</strong> the two-electron states<br />

(above the dash<strong>ed</strong> line). The six transitions that are allow<strong>ed</strong> (i.e. not spin-block<strong>ed</strong>)<br />

are indicat<strong>ed</strong> by vertical arrows. (b) Electrochemical potentials for the transitions<br />

between one- and two-electron states. The six transitions in (a) correspond <strong>to</strong> only<br />

four different electrochemical potentials. By changing the gate voltage, the whole<br />

ladder of levels is shift<strong>ed</strong> up or down<br />

tunnelling between the <strong>dots</strong>, with tunnelling matrix element t, ε0 (the “bonding<br />

state”) and ε1 (the “anti-bonding state”) are split by an energy 2t. By<br />

filling the two states with two electrons, we again get a spin singlet ground<br />

state and a triplet first excit<strong>ed</strong> state (at zero field). However, the singlet<br />

ground state is not purely S (Fig. 9a), but also contains a small admixture of<br />

the excit<strong>ed</strong> singlet S2 (Fig. 9f). The admixture of S2 depends on the competition<br />

between inter-dot tunnelling and the Coulomb repulsion, and serves <strong>to</strong><br />

lower the Coulomb energy by r<strong>ed</strong>ucing the double occupancy of the <strong>dots</strong> [33].<br />

If we focus only on the singlet ground state and the triplet first excit<strong>ed</strong><br />

states, then we can describe the two spins S1 and S2 by the Heisenberg<br />

Hamil<strong>to</strong>nian, H = JS1 · S2. Due <strong>to</strong> this mapping proc<strong>ed</strong>ure, J is now defin<strong>ed</strong><br />

as the energy difference between the triplet state T0 and the singlet ground<br />

state, which depends on the details of the double dot orbital states. From a<br />

Hund-Mulliken calculation [34], J is approximately given by 4t 2 /U +V , where<br />

U is the on-site charging energy and V includes the effect of the long-range<br />

Coulomb interaction. By changing the overlap of the wavefunctions of the<br />

two electrons, we can change t and therefore J. Thus, control of the interdot<br />

tunnel barrier would allow us <strong>to</strong> perform operations such as swapping or<br />

entangling two spins.

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