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Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru

Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru

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V L (V)<br />

-1.084<br />

-1.082<br />

-1.080<br />

-1.078<br />

a<br />

11<br />

Semiconduc<strong>to</strong>r Few-Electron <strong>Quantum</strong> Dots as Spin Qubits 59<br />

01 00<br />

10<br />

-0.54 -0.55 -0.56<br />

V PR (V)<br />

b<br />

∆V L (mV)<br />

5<br />

4<br />

3<br />

2<br />

1<br />

0<br />

0<br />

10<br />

20<br />

30<br />

40<br />

Frequency (GHz)<br />

Fig. 20. Pho<strong>to</strong>n-assist<strong>ed</strong> tunnelling in a one-electron double quantum dot. (a) Current<br />

through the double dot at the last set of triple points, with zero bias voltage<br />

(VDOT = VSD1 = VSD2 = 0). A microwave signal of 50 GHz is appli<strong>ed</strong> <strong>to</strong> PL. The<br />

microwaves pump a current, IDOT , by absorption of single pho<strong>to</strong>ns [47]. This pho<strong>to</strong>nassist<strong>ed</strong><br />

current shows up as two lines, indicat<strong>ed</strong> by the two arrows. The white line<br />

(bot<strong>to</strong>m) corresponds <strong>to</strong> electrons being pump<strong>ed</strong> from the left <strong>to</strong> the right reservoir,<br />

the dark line (<strong>to</strong>p) corresponds <strong>to</strong> pumping in the reverse direction. In the middle,<br />

around the dott<strong>ed</strong> line separating the 01 from the 10 configuration, a finite current<br />

is induc<strong>ed</strong> by an unwant<strong>ed</strong> voltage drop over the double dot, due <strong>to</strong> asymmetric<br />

coupling of the ac-signal <strong>to</strong> the two leads. (b) Separation between the two pho<strong>to</strong>nassist<strong>ed</strong><br />

tunnelling lines versus microwave frequency. The dependence is linear down<br />

<strong>to</strong> the lowest frequency of about 6 GHz, from which it follows that the inter-dot tunnel<br />

coupling (half the energy difference between bonding and anti-bonding state) is<br />

smaller than ∼12 µeV<br />

voltage pulses appli<strong>ed</strong> <strong>to</strong> a metal gate induces tunnelling of electrons between<br />

the quantum dot and a reservoir. The effective tunnel rate depends on the<br />

number and nature of the energy levels in the dot made accessible by the<br />

pulse. Measurement of the charge dynamics thus reveals the energy spect<strong>ru</strong>m<br />

of the dot, as demonstrat<strong>ed</strong> for a dot in the few-electron regime.<br />

3.1 Introduction<br />

Few-electron quantum <strong>dots</strong> are consider<strong>ed</strong> as qubits for quantum circuits,<br />

where the quantum bit is s<strong>to</strong>r<strong>ed</strong> in the spin or orbital state of an electron in a<br />

single or double dot. The elements in such a device must have functionalities<br />

such as initialization, one- and two-qubit operations and read-out [2]. For all<br />

these functions it is necessary <strong>to</strong> have precise knowl<strong>ed</strong>ge of the qubit energy<br />

levels. Standard spectroscopy experiments involve electron transport through<br />

the quantum dot while varying both a gate voltage and the source-drain<br />

50

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