Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru
Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru
Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru
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a<br />
b<br />
c<br />
V P (mV)<br />
10<br />
5<br />
0<br />
∆I QPC<br />
E F<br />
Semiconduc<strong>to</strong>r Few-Electron <strong>Quantum</strong> Dots as Spin Qubits 75<br />
empty<br />
Q dot =0<br />
E<br />
E<br />
in<br />
t wait<br />
inject & wait<br />
Q dot =-e<br />
t read<br />
read-out empty<br />
out in<br />
out<br />
time<br />
Q dot=0<br />
time<br />
Fig. 29. Two-level pulse technique us<strong>ed</strong> <strong>to</strong> inject a single electron and measure its<br />
spin orientation. (a) Shape of the voltage pulse appli<strong>ed</strong> <strong>to</strong> gate P . The pulse level<br />
is 10 mV during twait and 5 mV during tread (which is 0.5 ms for all measurements).<br />
(b) Schematic QPC pulse-response if the inject<strong>ed</strong> electron has spin-↑ (solid line) or<br />
spin-↓ (dott<strong>ed</strong> line; the difference with the solid line is only seen during the read-out<br />
stage). Arrows indicate the moment an electron tunnels in<strong>to</strong> or out of the quantum<br />
dot. (c) Schematic energy diagrams for spin-↑ (E↑) and spin-↓ (E↓) during the<br />
different stages of the pulse. Black vertical lines indicate the tunnel barriers. The<br />
tunnel rate between the dot and the QPC-drain on the right is set <strong>to</strong> zero. The rate<br />
between the dot and the reservoir on the left is tun<strong>ed</strong> <strong>to</strong> a specific value, Γ .Ifthe<br />
spin is ↑ at the start of the read-out stage, no change in the charge on the dot occurs<br />
during tread. In contrast, if the spin is ↓, the electron can escape and be replac<strong>ed</strong><br />
by a spin-↑ electron. This charge transition is detect<strong>ed</strong> in the QPC-current (dott<strong>ed</strong><br />
line inside gray circle in (b))<br />
5.4 Tuning the <strong>Quantum</strong> Dot in<strong>to</strong> the Read-Out Configuration<br />
To perform spin read-out, VM has <strong>to</strong> be fine-tun<strong>ed</strong> so that the position of the<br />
energy levels with respect <strong>to</strong> EF is as shown in Fig. 29c. To find the correct<br />
settings, we apply a two-level voltage pulse and measure the QPC-response