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Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru

Heiss W.D. (ed.) Quantum dots.. a doorway to - tiera.ru

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102 M. Pustilnik and L.I. Glazman<br />

(13) (here we <strong>to</strong>ok in<strong>to</strong> account that the screening length in two dimensions<br />

coincides with the Bohr radius a0), which yields<br />

ES ∼ rs ln (1/rS) δE ≪ δE . (14)<br />

The estimate (14) is valid only for rs ≪ 1. However, the ratio ES/δE remains<br />

small for experimentally relevant 2 value rs ∼ 1 as long as the S<strong>to</strong>ner criterion<br />

for the absence of itinerant magnetism [23] is satisfi<strong>ed</strong>. This guarantees the<br />

absence of a macroscopic (proportional <strong>to</strong> N) magnetization of a dot in the<br />

ground state [19].<br />

The third term in (10), representing interaction in the Cooper channel,<br />

is renormaliz<strong>ed</strong> by higher-order corrections arising due <strong>to</strong> virtual transitions<br />

<strong>to</strong> states outside the energy strip of the width ET about the Fermi level.<br />

For attractive interaction (Λ 0),<br />

in which case Λ is very small,<br />

δE<br />

Λ ∼<br />

ln(ɛF /ET )<br />

∼ δE<br />

ln N<br />

≪ δE .<br />

This estimate accounts for the logarithmic renormalization of Λ when the<br />

high-energy cu<strong>to</strong>ff is r<strong>ed</strong>uc<strong>ed</strong> from the Fermi energy ɛF down <strong>to</strong> the Thouless<br />

energy ET [20]. In addition, if the time-reversal symmetry is lift<strong>ed</strong> (β =2)<br />

then the third term in (10) is zero <strong>to</strong> start with. Accordingly, hereinafter we<br />

neglect this term al<strong>to</strong>gether by setting Λ =0.<br />

Obviously, the interaction part of the Hamil<strong>to</strong>nian (10), is invariant with<br />

respect <strong>to</strong> a change of the basis of single-particle states φi(r). Picking up the<br />

basis in which the first term in (1) is diagonal, we arrive at the universal<br />

Hamil<strong>to</strong>nian [19, 20],<br />

Hdot = �<br />

ɛnd † � �2 nsdns + EC<br />

ˆN − N0 − ES ˆ S 2 . (15)<br />

ns<br />

We includ<strong>ed</strong> in (15) the effect of the capacitive coupling <strong>to</strong> the gate electrode:<br />

the dimensionless parameter N0 is proportional <strong>to</strong> the gate voltage,<br />

N0 = CgVg/e ,<br />

where Cg is the capacitance between the dot and the gate, see Fig. 1. The<br />

relative magnitude of fully off-diagonal interaction terms in (1) (corresponding<br />

2 For GaAs (m ∗ ≈ 0.07me, κ ≈ 13) the effective Bohr radius a0 ≈ 10 nm, whereas<br />

a typical density of the two-dimensional electron gas, n ∼ 10 11 cm −2 [3], corresponds<br />

<strong>to</strong> kF = √ 2πn ∼ 10 6 cm −1 . This gives kF a0 ∼ 1.

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