The Impact of Dennard's Scaling Theory - IEEE

Message from the President
In 2007, look for an unadvertised bonus
with your SSCS membership: A free
subscription to the brand new quarterly
Nanotechnology Magazine. We believe
that circuit experts need to be in touch
with this rapidly progressing technology.
Some day it will be a fruitful area
for circuits development, and opportunities to contribute
will arise.
The minimal subscription cost to the Society for the
launch year of the new magazine prompted the AdCom
to join the Nanotechnology Council. We hope the
Council’s magazine effort will be of comparable interest
to its Transactions on Nanotechnology, which is just
beginning its sixth year and has among the highest rates
of citation as measured by the Thompson ISI. I would
like to receive feedback from you on how useful a tool
the new magazine is. Look for the first issue in the
spring of 2007.
2007 is the Society’s 10th anniversary, having
evolved from the Solid-State Circuits Council that originated
in 1970. We’ve updated the SSCS logo for this
year to draw attention to our progress. Since 1997, the
Journal of Solid-State Circuits has increased coverage of
technical articles by 40%, and the SSCS Newsletter by 2
1/2 times. The JSSC continues to be the most read in
IEEE Xplore and the most cited in patents. Your SSCS
membership provides online access not only to the
Journal but also to the digests of our five major solidstate
circuits conferences and most of their historic
record. Local chapters have grown from 2 to 59, with
Corrections
In the article entitled “Overview of
CMOS Technology Development in
the MIRAI Project,” by Toshiaki
Masuhara and Masataka Hirose in
the September 2006 issue, the last
sentence in the Section entitled
“New Circuits and System Technology
- Post-fabrication Adaptive
Adjustment” contains an incorrect
expression, which is corrected as in
the underlined expression in the following
sentence:
“As shown in Fig. 3, the developed
tool successfully extracted the
34 model parameters in 23 hours
with a PC and resulted in a mean
RMS error of 1.83% for benchmark
MOSFETs.”
In the Section, “New Gate Stack
Technology with High-k Materials”,
the caption for Figure 4 should read:
Fig. 4 Gate leakage current in
MIRAI HfAlON formed by Layer-by-
Layer Deposition and Annealing
(LL-D&A) 4 ).
(a) Comparison of gate leakage current
in MOSFETs with HfAlON
gate insulator and HfSiON 5 ).
(b) Cross sectional TEM micrograph
of HfAlON/SiO 2 /Si gate stack
formed by Layer-by-Layer Deposition
and Annealing.
The following corrections pertain
to the reprint of “Lithography and
the Future of Moore’s Law” (Moore,
1995) in the September 2006 issue:
I have reproduced photomicrographs
of the first planar transistor
the recent addition of Tainan (Taiwan) and South
Brazil. Celebrate our anniversary by browsing your
technical articles online.
I’ve been active in the last quarter attending many of
the conferences that SSCS cosponsors to sample their
quality, focus, and differences, as well as to increase the
Society’s visibility and support for these important gatherings
of technical experts. ESSCIRC in Montreux,
Switzerland last fall was fully overlapped with the ESS-
DERC device conference. One was able to move freely
between the co-located meetings. The wide variety of
plenary topics covered by the two meetings was of particular
interest. Welcoming the Asian-Solid-State Circuits
Conference in Hangzhou, China two months later, I was
able to talk with circuit experts from around the world,
and by the time this issue reaches you, I will have celebrated
the opening of the 20th International Conference
on VLSI Design in Bangalore.
Thanks to all of our members who voted in our fall
election. Welcome to our new additions to AdCom,
Kevin Kornegay from Georgia Tech and Harry Lee from
MIT. And welcome back to returning AdCom members
John Corcoran from Agilent Laboratories, Tom Lee from
Stanford, and Jan Van der Spiegel from the University of
Pennsylvania. The Society is beginning a review of its
priorities for 2007 and beyond. As Society members,
please make your interests known to your AdCom representatives.
Start a conversation and help the Society
point to the future that you feel is coming.
Richard C. Jaeger
and the first commercially-available
integrated circuit in Figs 3 & 4. I am
particularly fond of the transistor,
since it is one of the very few products
that I designed myself that
actually went into production.
Fig. 3. Photomicrograph of the first
commercial planar transistor.
continued on page 10
4 IEEE SSCS NEWSLETTER Winter 2007