The Impact of Dennard's Scaling Theory - IEEE

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image sensing, which resulted in
the project leadership of respectively
SDTV- and HDTV-imagers.
In 1991 he became Department
Head of the division Imaging
Devices, including CCD as well
as CMOS solid-state imaging
activities.
He is author or coauthor of
many technical papers in the solidstate
imaging field and issued several
patents. In 1988, 1989, 1995
and 1996 he was a member of the
International Electron Devices
Meeting paper selection committee.
He was co-editor of the IEEE
Transactions on Electron Devices
special issues on Solid-State Image
Sensors, May 1991, October 1997
and January 2003, and of IEEE
Micro special issue on Digital
Imaging, Nov./Dec. 1998.
He acted as general chairman of
the IEEE International Workshop on
Charge-Coupled Devices and
Advanced Image Sensors in 1997
and in 2003. He is member of the
Steering Committee of the aforementioned
workshop and founder
of the Walter Kosonocky Award,
which highlights the best paper in
the field of solid-state image sensors.
During several years he was a
member of the technical committee
of the European Solid-State
Device Research Conference and
of the European Solid-State Circuits
Conference.
Since 1999 he is a member of
the technical committee of the
International Solid-State Circuits
Conference. For the same conference
he acted as secretary, vicechair
and chair in the European
ISSCC Committee and he is a member
of the overall ISSCC Executive
Committee.
In 1995, he authored a textbook
“Solid-State Imaging with Charge-Coupled
Devices”. In 1998 he became an
IEEE Distinguished Lecturer.
In March 2001, he became parttime
professor at the Delft University
of Technology, the Netherlands.
At this University he teaches
courses in solid-state imaging
and coaches PhD students in their
research on CMOS image sensors.
In April 2002, he joined DALSA
Corp. to act as the company’s
Chief Technology Officer. In September
2004 he retired as CTO and
became Chief Scientist of DALSA
Semiconductors. This shift allows
him to focus more on the field of
training and teaching solid-state
image sensor technology.
In 2005 he founded ETETIS
(European Technical Expert Team
on Image Sensors), a non-profit
organization to promote European
R&D activities in the field of solidstate
image sensors.
He is member of editorial board
of the magazine “Photonics Spectra”,
an IEEE Fellow and member
of SPIE.
Roland Thewes was
born in Marl, Germany,
in 1962. He
received the Dipl.-
Ing. degree and the
Dr.-Ing. degree in
Electrical Engineering
from the University of Dortmund,
Dortmund, Germany, in
1990 and 1995, respectively. From
1990-1995, he worked in a cooperative
program between the Siemens
Research Laboratories in Munich
and the University of Dortmund in
the field of hot-carrier degradation
in analog CMOS circuits.
Since 1994 he was with the
Research Laboratories of Siemens
AG and Infineon Technologies,
where he was active in the design
of non-volatile memories and in
the field of reliability and yield of
analog CMOS circuits. From 1997-
1999, he managed projects in the
fields of design for manufacturability,
reliability, analog device performance,
and analog circuit
design. From 2000-2005, he was
responsible for the Lab on Mixed-
Signal Circuits of Corporate
Research of Infineon Technologies
focusing on CMOS-based bio-sensors,
device physics-related circuit
design, and advanced analog
CMOS circuit design. Since 2006,
he is heading a department developing
DRAM Core Circuitry at
Qimonda.
He has authored or co-authored
some 120 publications including
book chapters, tutorials, invited
papers, etc., and he gave lectures
and courses at universities. He
served as a member of the technical
program committees of the
International Reliability Physics
Symposium (IRPS), and of the
European Symposium on Reliability
of Electron Devices, Failure
Physics and Analysis (ESREF). He
is a member of the technical program
committees of the International
Solid-State Circuits Conference
(ISSCC), of the International
Electron Device Meeting (IEDM),
and of the European Solid State
Device Research Conference (ESS-
DERC). Moreover, in 2004, he
joined the IEEE EDS VLSI Technology
and Circuits Committee.
Dr. Thewes is a member of the
IEEE and of the German Association
of Electrical Engineers (VDE).
Ken Uchida was
born in Cambridge,
MA in 1971. He
received B.S. degree
in physics, M.S. and
Ph.D. degrees in
applied physics all
from the University of Tokyo,
Tokyo, Japan, in 1993, 1995, and
2002, respectively. In 1995, he
joined the Research and Development
Center, Toshiba Corporation,
Kawasaki, Japan. He has studied
carrier transport properties in
nano-scaled devices such as Single-Electron
Devices, Schottky
source/drain MOSFETs, Ultrathinbody
SOI MOSFETs, Strained Silicon
MOSFETs, and Carbon Nanotube
Transistors. He developed the
physics-based compact model of
single-electron transistors and the
design scheme of single-electron
logic circuits. He investigated the
physical mechanisms of mobility
enhancement in uniaxial stressed
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