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Metal Foams: A Design Guide

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228 <strong>Metal</strong> <strong>Foams</strong>: A <strong>Design</strong> <strong>Guide</strong><br />

in accordance with:<br />

q/q D ⊲bsi/bhs⊳ 2<br />

⊲17.1⊳<br />

With bsi D 1<br />

2 cm, this requirement results in bhs D 25 cm, causing the overall<br />

system to occupy a large volume. The goal of the case study is to reduce bhs to<br />

3 cm, by using a cellular metallic heat sink, resulting in an order of magnitude<br />

reduction in overall volume.<br />

The power density at the electronics is limited by the temperature reached<br />

at the junction, Tj. For Si electronics, Tj must be less than 120°C toavert<br />

unacceptable degradation. The design of the system and the importance of<br />

the heat transfer coefficient at the sink interrelate through q, q and Tj. The<br />

capacity of the fluid pumping system is another key factor. Such systems are<br />

characterized by an operating curve that connects the back pressure to the<br />

allowable fluid flow rate through the sink (Figure 17.13).<br />

Mesocell<br />

Heat<br />

Sink<br />

;;;;;<br />

;;;;;<br />

;;;;;<br />

Cooling fluid<br />

PCM 2<br />

PCM 1<br />

T s (r)<br />

Cooling fluid<br />

1 Heat spreader<br />

2 Planar micro heat pipe<br />

bA N z q<br />

q=0 hsi r Si Electronics q=0<br />

h A N<br />

h cu<br />

h 1<br />

b si<br />

h 2<br />

b<br />

A N<br />

T b (r)<br />

Figure 17.13 An example of integrated gate bipolar transistor design<br />

q<br />

q<br />

V •<br />

b hs<br />

H<br />

H s

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