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PRACA DOKTORSKA Zale ność własności strukturalnych ...

PRACA DOKTORSKA Zale ność własności strukturalnych ...

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Spis literatury do podrozdziałów V.1-V.21 Podsiadło S, Stages of synthesis of gallium nitride with the use of urea, Thermochim. Acta 256 (1995)367-3732 Schulz H, Thiemann KH, Crystal structure refinement of AlN and GaN, Solid State Commun. 23(1977) 815-8193 Chen XL, Liang JK, Xu YP, Xu T, Jiang PZ, Yu YD, Lu KQ, Structure and Debye temperature ofwurtzite GaN, Modern Phys. Lett. B 13 (1999) 285-2904 Reeber RR, Wang K, Lattice parameters and thermal expansion of GaN, J. Mater. Res. 15 (1) (2000)40-445 Paszkowicz W, Podsiadlo S, Minikayev R, Rietveld-refinement study of aluminium and galliumnitrides, J. of Alloys Compd. 382 (2004) 100-1066 Petkov V, Gateshki M, Choi J, Gillan EG, Ren Y, Structure of nanocrystalline GaN from X-raydiffraction, Rietveld and atomic pair distribution function analyses, J. Mater. Chem. 15 (2005) 4654-46597 Yamane H, Shimada M, DiSalvo FJ, Growth of zinc-blend-type structure GaN from a Na-Ga melt,Mater. Lett. 42 (2000) 66-708 Paszkowicz W, Domagala JZ, Sokolowski JA, Kamler G, Podsiadlo S, Knapp M, Thermal expansionof GaN in the temperature range 11 K - 296 K, w: Synchrotron Radiation Studies of Materials:Proceedings of 5th National Symposium of Synchrotron Radiation Users, Lefeld-Sosnowska M,Gronkowski J (wyd.), (Institute of Experimental Physics, Warsaw University, Warszawa 1999), str.183-1899 Ikeda T, Takata M, Sakata M, Waliszewski J, Dobrzyński L, Porowski S, Jun J, Electron densitydistribution of wurtzite-type gallium nitride by maximum entropy method, J. Phys. Soc. Jpn 67(1998) 4104-410910 Balkas CM, Davis RF, Synthesis routes and characterization of high-purity, single-phase galliumnitride powders, J. Am. Ceram. Soc. 79 (1996) 2309-231211 Krukowski S, Leszczynski M, Porowski S, Thermal properties of the group III nitrides, w: Edgar JH,Strite S, Akasaki I, Amano H and Wetzel C (wyd.), Properties, processing and applications of GaNand related semiconductors (INSPEC, Institution of Electrical Engineers, London, UK, 1999) str.21-2812 Yamane H, Shimada M, Endo T, DiSalvo FJ, Polarity of GaN single crystals prepared with Na flux,Jpn. J. Appl. Phys. 37 (1998) 3436-344013 Leszczynski M, Grzegory I, Teisseyre H, Suski T, Bockowski M, Jun J, Baranowski JM, PorowskiS, Domagala J, The microstructure of gallium nitride monocrystals grown at high pressure, J. Cryst.Growth 169 (1996) 235-24214 Leszczynski M, Teisseyre H, Suski T, Grzegory I, Bockowski M, Jun J, Porowski S, Pakula K,Baranowski JM, Foxon CT, Cheng TS, Lattice parameters of gallium nitride, Appl. Phys. Lett. 69(1996) 73-7515 Leszczynski M, Suski T, Perlin P, Teisseyre H, Grzegory I, Bockowski M, Jun J, Porowski S, MajorJ, J. Phys. D 28 (1995) A149-A15316 Stampfl C, Van de Walle CG, Density-functional calculations for III-V nitrides using the localdensityapproximation and the generalized gradient approximation, Phys. Rev. B 59 (1998) 5521-553517 Zoroddu A, Bernardini F, Ruggerone P, Fiorentini V, First principles prediction of structure,energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN,GaN, and InN: Comparison of local and gradient-corrected density-functional theory, Phys. Rev. B64 (2001) 045208/1-652

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