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Prva stran - WBC-INCO Net

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where d is the film's thickness determined using weighing<br />

method, and A is the absorbance determined from the<br />

values of transmittance, , using the equation<br />

T (%)<br />

100<br />

A = ln .<br />

T (%)<br />

Fig.9 and Fig.10 show (αhν) 2 versus hν dependance for<br />

the Cu2O/SnO2 film and Cu2O/ITO film corresponding. The<br />

intersection of the straight line with the hν axis determines<br />

the optical band gap energy Eg. It was found to be 2,33 eV<br />

for Cu2O/SnO2 film and 2,38 eV for Cu2O/ITO. They are<br />

higher than the value of 2 eV given in the literature and<br />

obtained for Cu2O polycristals[2]. This values are in good<br />

agreement with band gaps determined from the spectral<br />

characteristics of the cells made with electrodeposited Cu2O<br />

films.The value of the energy band gap of Cu2O/ITO is little<br />

higher than the value of Cu2O/SnO2 film. The reason is<br />

maybe different size of the grains.<br />

Fig.9 shows that there is no different in optical band gap<br />

energy determined from the curve plotted before annealing<br />

and from the curve plotted after annealing. Also, Fig.9 and<br />

Fig.10 show that there is no shape absorption boundary in<br />

the small energy range of the photons. Probably defects and<br />

structural irregularities are present in the films.<br />

Fig.9. Graphical determination of the optical band gap energy for<br />

Cu2O/SnO2 film<br />

( x - before annealing; · - after annealing)<br />

Fig.10. Graphical determination of the optical<br />

band gap energy for Cu2O/ITO film<br />

III. CONCLUSION<br />

Polycrystalline thin and uniform films of cuprous oxide<br />

with thickness of about 5-6μm were electrodeposited on<br />

copper and transparent conducting glass coated with highly<br />

conducting tin oxide (TCO) and indium tin oxide (ITO).<br />

Electrochemical deposition is an cheapest and simple<br />

method for depositing. In this work a method of simple<br />

processes of electrolysis has been applied. The film<br />

thickness can be controlled by the time of deposition.The<br />

structure of the films was studied by X – ray diffraction. It<br />

was found that all films are polycrystalline and chemically<br />

pure Cu2O with no traces of CuO. The surface morphology<br />

indicate a polycrystalline structure with grains in size about<br />

1-2 μm and less. The optical band-gap of the films was<br />

determined using the transmitance spectrums. It was found<br />

to be 2,33 eV for Cu2O/SnO2 film and 2,38 eV for<br />

Cu2O/ITO.<br />

4

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