tesi R. Miscioscia.pdf - EleA@UniSA

Chapter 4 109
insulators to increase the hydrophobicity level and obtain a large-grain
growth of pentacene.
Known techniques to account this are the utilization of highly
hydrophobic compounds in gate dielectric layer fabrication, the
surface treatment of usual insulating materials by chemical [14][15]
and/or physical [16] processing or by the deposition of buffer layers
[11][12][13], self-assembled monolayers (SAM)[17] or selfassembled
multilayers (SAMT)[18].
In the preparation of the new dielectric materials, we introduced
an organic-inorganic hybrid material based on a Tetraethyl
Orthosilicate / 1H,1H,2H,2H-Perfluorodecyl triethoxysilane
commonly named “PFTEOS:TEOS” solution. The abovementioned
layer is characterized by perfluoroalkyl units which are responsible of
the desired hydrophobic properties. It has been deposited by a spincoating-based
sol-gel technique on the metallic gate layer.
From the point of view of the physical treatments we studied the
effect of CF4 plasma treatments on common PMMA gate dielectrics as
it has been already done on PVP/CeO2 combined dielectrics [16].
Furthermore, by following the same optimization path, a thin film
(