tesi R. Miscioscia.pdf - EleA@UniSA

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84 State of the Art [54] M.M. Ling, and Z. Bao, Chem. Mater., 2004, 16 (23), 4824- 4840 [55] Y-Y Noh, N. Zhao, M. Caironi and H. Sirringhaus, Nature Nanotechnology 2, 784 - 789 (2007) [56] Sele et al., Adv. Mater. 2005, 17, No. 8, April 18 [57] Sung et al., Adv. Mater. 2008, 20, 1505–1510
Chapter 3 Gate-leakages in polymeric dielectrics and layout optimization The purpose of this chapter is to highlight the importance of the analysis of non-idealities in the static electrical characteristics of organic p-type thin film transistors (OTFTs). Such studies can improve the interpretations of the performance parameters as carrier mobility and device threshold voltage. Our investigation includes the characterization of Pentacene-OTFTs fabricated with different gate dielectrics to study the impact of gate leakage currents in the modeling of static characteristics of the device, and the effects of thermal annealing on such device non-idealities. 3.1 Introduction Pentacene (C22H14) thin films for organic electronic applications have been widely exploited for research purposes, because of their good field-effect mobility enhanced by past advances in vacuumbased deposition techniques[1]. For these reasons such organic semiconductor is considered a benchmark material in OTFT studies and surface’s optimization. Therefore, our analysis will take advantage of the literature knowledge about this material to investigate gate-dielectric static dissipations. The gate leakage current is one of the most important nonidealities in field-effect transistors operation, in particular for applications in digital logic circuits and in pixel-drivers of active matrix organic displays backplanes. The presence of such leakage is evident in ID/VDS output characteristics, which fail zero-crossing at VDS = 0 V in the linear region. Thus, the operation in this regime becomes difficult and performances decrease, also in terms of on-off currents ratio [3]. In some works, a thermal annealing has been proved
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Università degli Studi di Salerno
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Acknowledgments It is a pleasure to
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In loving memory of my uncle, Profe
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Introduction Nowadays, it has becom
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Introduction 3 The drawbacks of org
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Introduction 5 Artificial Skin (OTF
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Introduction 7 structure has been d
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Chapter 1 Working principles An Org
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Chapter 1 11 1.1 A model for DC beh
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Chapter 1 13 hp. 4) Decoupling betw
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Chapter 1 15 figure 2: integration
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Chapter 1 17 eq. 11 − = Then, bei
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Chapter 1 19 The formula in eq. 18
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Chapter 1 21 and behaves as a resis
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Chapter 1 23 eq. 22 I DS = μ C ins
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Chapter 1 25 In eq. 27, kB is the B
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Chapter 1 27 eq. 30 · Thu
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Chapter 2 A survey on the state of
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Chapter 2 31 emphasizing the role p
Page 39 and 40: Chapter 2 33 Only after those years
Page 41 and 42: Chapter 2 35 In fact, usually the m
Page 43 and 44: Chapter 2 37 Examples of top-gate b
Page 45 and 46: Chapter 2 39 deposition process of
Page 47 and 48: Chapter 2 41 region is patterned by
Page 49 and 50: Chapter 2 43 figure 11: Non-Relief-
Page 51 and 52: Chapter 2 45 factor analysing, in p
Page 53 and 54: Chapter 2 47 In literature results,
Page 55 and 56: Chapter 2 49 It is clear that the c
Page 57 and 58: Chapter 2 51 In figure 17 the impro
Page 59 and 60: Chapter 2 53 figure 19: OFET trans-
Page 61 and 62: Chapter 2 55 figure 22: Comparison
Page 63 and 64: Chapter 2 57 channel and gate in Pe
Page 65 and 66: Chapter 2 59 figure 28: Pentacene b
Page 67 and 68: Chapter 2 61 figure 31: OTFT realiz
Page 69 and 70: Chapter 2 63 materials, the higher
Page 71 and 72: Chapter 2 65 The effect of the barr
Page 73 and 74: Chapter 2 67 figure 36: potential p
Page 75 and 76: Chapter 2 69 From table 2, it is ea
Page 77 and 78: Chapter 2 71 thermal-budget treatme
Page 79 and 80: Chapter 2 73 in particular in OLEDs
Page 81 and 82: Chapter 2 75 One interesting charac
Page 83 and 84: Chapter 2 77 figure 48: electrical
Page 85 and 86: Chapter 2 79 The research on the OE
Page 87 and 88: Chapter 2 81 photolysis). In this p
Page 89: Chapter 2 83 [26] Facchetti, Wasiel
Page 93 and 94: Gate-leakages 87 determined by XRD
Page 95 and 96: Gate-leakages 89 The results are:
Page 97 and 98: Gate-leakages 91 It has to be consi
Page 99 and 100: Gate-leakages 93 figure 8: Output c
Page 101 and 102: Gate-leakages 95 figure 12: electri
Page 103 and 104: Gate-leakages 97 3.4 Advanced circu
Page 105 and 106: Gate-leakages 99 figure 16: SEM ima
Page 107 and 108: Gate-leakages 101 modeled with a co
Page 109 and 110: Gate-leakages 103 eq. 11 • Shadow
Page 111 and 112: Gate-leakages 105 References [1] R.
Page 113 and 114: Chapter 4 Morphology-mobility relat
Page 115 and 116: Chapter 4 109 insulators to increas
Page 117 and 118: Chapter 4 111 3.2 General device st
Page 119 and 120: Chapter 4 113 Pentacene islands are
Page 121 and 122: Chapter 4 115 For the preparation o
Page 123 and 124: Chapter 4 117 figure 3: PFTEOS:TEOS
Page 125 and 126: Chapter Chapter 4 4 119 (a): (a):
Page 127 and 128: Chapter 4 121 3.4 Device’s charac
Page 129 and 130: Chapter 4 123 mobility with the dim
Page 131 and 132: Chapter 4 125 As it can be observed
Page 133 and 134: Chapter 4 127 eq. 4 Where r
Page 135 and 136: Chapter 4 129 3.4.3 Thermal charact
Page 137 and 138: Chapter 4 131 Ea(eV) 0.50 0.45 0.40
Page 139 and 140: Chapter 4 133 I D (A) 100.0n 80.0n
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Chapter 4 135 μ (cm 2 V -1 s -1 )
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Chapter 4 137 T MN (K) 2400 2200 20
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Chapter 4 139 Such results, supply
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Chapter 4 141 References [1] O. D.
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Chapter 4 143 [26] P. Palestri, D.
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Conclusions In this PhD dissertatio
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Introduction 147 characterizing mor
Page 155 and 156:
Table of acronyms and symbols Symbo
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Table of acronyms and symbols _____
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