tesi R. Miscioscia.pdf - EleA@UniSA

Chapter 2 51
In figure 17 the improvements introduced by state-of-the –art
surface treatments in the case of n-type and p-type OFETs fabricated
on a SiO2 gate dielectric.
figure 17: Self-Assembled Monolayer (SAM) surface treatments on SiO2 performed on P5
(pentacene) and C60 as reported by [33]
In particular, deposition treatments of Self-Assembled
Monolayers (since now: SAM) made by NH2, CH3 and F are shown in
figure 17.
Not less important is the action of the SAM on the threshold
voltages of the same OTFT as shown by Kobayashi remarked before.
In the abovementioned works of Veres et al. on surface
treatments[32], it can be noticed a clear relationship between changes
in surface energy of the insulator and the mobility obtained in P3HT
(see also figure 18).