tesi R. Miscioscia.pdf - EleA@UniSA

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$3Eterov e)ce(te/rou sofo\v to/ te pa/lai to/ te nu=n. Ou ... - EleA@UniSA$

138 Exceptions in morphology-mobility relationship eq. 6 2 μ(cm 2 V -1 s -1 ) 0.07 0.06 0.05 0.04 0.03 0.02 0.01 5 T MN and μ are calculated after Esseni's I ch extraction PFTEOS:TEOS/PMMA PFTEOS:TEOS PMMA 400nm 0.00 0 500 1000 1500 2000 2500 T MN (K) figure 22: trend inversion in mobility/EMN dependance shown by the comparison between PMMA (black squares) and PFTEOS:TEOS samples. Then, if we refer to estimated TMN for PMMA and PFTEOS:TEOS samples extracted after Esseni’s modeling of Ich, we can summarize this results in the table 7. Sample T MN(K) σ PMMA 115nm 2264 0.49 PMMA 225nm 1685 0.36 PMMA 420nm 649 0.14 PFTEOS:TEOS 270nm 574 0.12 PFTEOS:TEOS/PMMA 270nm 526 0.11 table 7: Gaussian DOS variance estimation by means of MNR application in PMMA and PFTEOS:TEOS samples PMMA 225nm PMMA 115nm
Chapter 4 139 Such results, supply an indirect estimation of the energy disorder in the electronic states induced by dielectric interface properties by means of DC measurements at different temperatures. We can conclude that samples having a PFTEOS:TEOS dielectric have a lower spread of states density and then a lower interface disorder and a higher charge mobility if compared with PMMA OTFTs. For PMMA samples the TMN-µFE trend seems to be inverted denoting that the thermally activated process of charge trapping and release, bound to the pre-factor of MN rule (eq. 7), overcompensates the effect of the increase of activation energy and then the behavior is dominated by grains more than by island-interconnections. eq. 7 0 3.5 Conclusions In the present chapter we studied the OTFT performances when varying the dielectric material. In an optimization approach, we utilized the surface wettability as a key factor to be decreased to obtain performing channels. By following this path, a sol-gel processed organic-inorganic hybrid dielectric (PFTEOS:TEOS) has been developed and compared with plain polymeric dielectrics. A surface treatment and a bufferization process have been studied and analyzed and results utilized to relate pentacene grain dimension to charge transport. This relationship has been analyzed showing the anomaly in the behavior of PFTEOS:TEOS innovative insulators if compared to a wide class of polymeric dielectrics. Thermal analyses of charge transport activation for the considered samples have been performed showing a general validity of the MNR also for hybrid dielectrics but the extraction of energetic parameters in Arrhenius plots applied to static electrical characterizations, has
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Università degli Studi di Salerno
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Acknowledgments It is a pleasure to
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In loving memory of my uncle, Profe
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Introduction Nowadays, it has becom
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Introduction 3 The drawbacks of org
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Introduction 5 Artificial Skin (OTF
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Introduction 7 structure has been d
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Chapter 1 Working principles An Org
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Chapter 1 11 1.1 A model for DC beh
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Chapter 1 13 hp. 4) Decoupling betw
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Chapter 1 15 figure 2: integration
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Chapter 1 17 eq. 11 − = Then, bei
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Chapter 1 19 The formula in eq. 18
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Chapter 1 21 and behaves as a resis
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Chapter 1 23 eq. 22 I DS = μ C ins
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Chapter 1 25 In eq. 27, kB is the B
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Chapter 1 27 eq. 30 · Thu
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Chapter 2 A survey on the state of
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Chapter 2 31 emphasizing the role p
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Chapter 2 33 Only after those years
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Chapter 2 35 In fact, usually the m
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Chapter 2 37 Examples of top-gate b
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Chapter 2 39 deposition process of
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Chapter 2 41 region is patterned by
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Chapter 2 43 figure 11: Non-Relief-
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Chapter 2 45 factor analysing, in p
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Chapter 2 47 In literature results,
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Chapter 2 49 It is clear that the c
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Chapter 2 51 In figure 17 the impro
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Chapter 2 53 figure 19: OFET trans-
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Chapter 2 55 figure 22: Comparison
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Chapter 2 57 channel and gate in Pe
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Chapter 2 59 figure 28: Pentacene b
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Chapter 2 61 figure 31: OTFT realiz
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Chapter 2 63 materials, the higher
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Chapter 2 65 The effect of the barr
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Chapter 2 67 figure 36: potential p
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Chapter 2 69 From table 2, it is ea
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Chapter 2 71 thermal-budget treatme
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Chapter 2 73 in particular in OLEDs
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Chapter 2 75 One interesting charac
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Chapter 2 77 figure 48: electrical
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Chapter 2 79 The research on the OE
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Chapter 2 81 photolysis). In this p
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Chapter 2 83 [26] Facchetti, Wasiel
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Chapter 3 Gate-leakages in polymeri
Page 93 and 94: Gate-leakages 87 determined by XRD
Page 95 and 96: Gate-leakages 89 The results are:
Page 97 and 98: Gate-leakages 91 It has to be consi
Page 99 and 100: Gate-leakages 93 figure 8: Output c
Page 101 and 102: Gate-leakages 95 figure 12: electri
Page 103 and 104: Gate-leakages 97 3.4 Advanced circu
Page 105 and 106: Gate-leakages 99 figure 16: SEM ima
Page 107 and 108: Gate-leakages 101 modeled with a co
Page 109 and 110: Gate-leakages 103 eq. 11 • Shadow
Page 111 and 112: Gate-leakages 105 References [1] R.
Page 113 and 114: Chapter 4 Morphology-mobility relat
Page 115 and 116: Chapter 4 109 insulators to increas
Page 117 and 118: Chapter 4 111 3.2 General device st
Page 119 and 120: Chapter 4 113 Pentacene islands are
Page 121 and 122: Chapter 4 115 For the preparation o
Page 123 and 124: Chapter 4 117 figure 3: PFTEOS:TEOS
Page 125 and 126: Chapter Chapter 4 4 119 (a): (a):
Page 127 and 128: Chapter 4 121 3.4 Device’s charac
Page 129 and 130: Chapter 4 123 mobility with the dim
Page 131 and 132: Chapter 4 125 As it can be observed
Page 133 and 134: Chapter 4 127 eq. 4 Where r
Page 135 and 136: Chapter 4 129 3.4.3 Thermal charact
Page 137 and 138: Chapter 4 131 Ea(eV) 0.50 0.45 0.40
Page 139 and 140: Chapter 4 133 I D (A) 100.0n 80.0n
Page 141 and 142: Chapter 4 135 μ (cm 2 V -1 s -1 )
Page 143: Chapter 4 137 T MN (K) 2400 2200 20
Page 147 and 148: Chapter 4 141 References [1] O. D.
Page 149 and 150: Chapter 4 143 [26] P. Palestri, D.
Page 151 and 152: Conclusions In this PhD dissertatio
Page 153 and 154: Introduction 147 characterizing mor
Page 155 and 156: Table of acronyms and symbols Symbo
Page 157: Table of acronyms and symbols _____
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