tesi R. Miscioscia.pdf - EleA@UniSA

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74 State of the Art 2.7.2.2 Polyaniline Among the polymeric materials, Polyaniline (PANI) always had large attention, for the possibility to pattern it at photolithography quality without needing to etch material. In particular, in Gelink on APL, completely polymeric OTFTs integrated circuits are shown. The interconnection lines and OTFTs’ Sources and Drains have been produced through photopatterning of a PANI film 200 nm thick: PANI is exposed to deep UV radiation, to turn it into the much less conductive leucoemeraldine (see figure 44). figure 44: photopatterning of PANI to fabricate a logic of p-type transistors, with nominal feature size of 1 µm, and OTFTs characteristics.
Chapter 2 75 One interesting character of PANI is its qualitatively different behaviour respect to Gold when employed for contacts. In fact, as reported by Blanchet et al. in [49], the output characteristics in linear regime of a BC-OTFT using PANI contacts show ohmic trend, while the corresponding TC-OTFT acts differently (see figure 45). figure 45: left, output characteristics in linear regime of a BC-OTFT with PANI S and D; right, the corresponding TC-OTFT. Both devices use pentacene semiconductor [49] 2.7.3 Composite materials for Source and Drain electrodes Composite materials, as Gate insulator and as electrodes, are one of the approaches employed to improve the OTFT performances. In paragraph 2.7.1.3, we have already seen that a dispersion of Gold nanoparticles can be applied to fabricate patterned electrodes. Also Carbon nanotubes are quite often applied. For example, in [57], a dispersion of Single-Walled NanoTubes (SWNT) is deposited using spin-coating technique. To have contacts conductive enough to be employed in OTFTs, but not increasing the SWNT concentration beyond the percolation limit (and other important effects), authors apply the self-assembling of a matrix of poly(styreneblock-4vinylpyridine) (PS-b-P4VP) doped with HAuCl4.3H2O and with SWNT dispersed into, to increase electrical conductivity and not reduce film transparency. In figure 46, clear field TEM images are shown for a stabilized film (a) and at the highest possible concentration of doping (b). In (c),
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Università degli Studi di Salerno
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Acknowledgments It is a pleasure to
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In loving memory of my uncle, Profe
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Introduction Nowadays, it has becom
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Introduction 3 The drawbacks of org
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Introduction 5 Artificial Skin (OTF
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Introduction 7 structure has been d
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Chapter 1 Working principles An Org
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Chapter 1 11 1.1 A model for DC beh
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Chapter 1 13 hp. 4) Decoupling betw
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Chapter 1 15 figure 2: integration
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Chapter 1 17 eq. 11 − = Then, bei
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Chapter 1 19 The formula in eq. 18
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Chapter 1 21 and behaves as a resis
Page 29 and 30: Chapter 1 23 eq. 22 I DS = μ C ins
Page 31 and 32: Chapter 1 25 In eq. 27, kB is the B
Page 33 and 34: Chapter 1 27 eq. 30 · Thu
Page 35 and 36: Chapter 2 A survey on the state of
Page 37 and 38: Chapter 2 31 emphasizing the role p
Page 39 and 40: Chapter 2 33 Only after those years
Page 41 and 42: Chapter 2 35 In fact, usually the m
Page 43 and 44: Chapter 2 37 Examples of top-gate b
Page 45 and 46: Chapter 2 39 deposition process of
Page 47 and 48: Chapter 2 41 region is patterned by
Page 49 and 50: Chapter 2 43 figure 11: Non-Relief-
Page 51 and 52: Chapter 2 45 factor analysing, in p
Page 53 and 54: Chapter 2 47 In literature results,
Page 55 and 56: Chapter 2 49 It is clear that the c
Page 57 and 58: Chapter 2 51 In figure 17 the impro
Page 59 and 60: Chapter 2 53 figure 19: OFET trans-
Page 61 and 62: Chapter 2 55 figure 22: Comparison
Page 63 and 64: Chapter 2 57 channel and gate in Pe
Page 65 and 66: Chapter 2 59 figure 28: Pentacene b
Page 67 and 68: Chapter 2 61 figure 31: OTFT realiz
Page 69 and 70: Chapter 2 63 materials, the higher
Page 71 and 72: Chapter 2 65 The effect of the barr
Page 73 and 74: Chapter 2 67 figure 36: potential p
Page 75 and 76: Chapter 2 69 From table 2, it is ea
Page 77 and 78: Chapter 2 71 thermal-budget treatme
Page 79: Chapter 2 73 in particular in OLEDs
Page 83 and 84: Chapter 2 77 figure 48: electrical
Page 85 and 86: Chapter 2 79 The research on the OE
Page 87 and 88: Chapter 2 81 photolysis). In this p
Page 89 and 90: Chapter 2 83 [26] Facchetti, Wasiel
Page 91 and 92: Chapter 3 Gate-leakages in polymeri
Page 93 and 94: Gate-leakages 87 determined by XRD
Page 95 and 96: Gate-leakages 89 The results are:
Page 97 and 98: Gate-leakages 91 It has to be consi
Page 99 and 100: Gate-leakages 93 figure 8: Output c
Page 101 and 102: Gate-leakages 95 figure 12: electri
Page 103 and 104: Gate-leakages 97 3.4 Advanced circu
Page 105 and 106: Gate-leakages 99 figure 16: SEM ima
Page 107 and 108: Gate-leakages 101 modeled with a co
Page 109 and 110: Gate-leakages 103 eq. 11 • Shadow
Page 111 and 112: Gate-leakages 105 References [1] R.
Page 113 and 114: Chapter 4 Morphology-mobility relat
Page 115 and 116: Chapter 4 109 insulators to increas
Page 117 and 118: Chapter 4 111 3.2 General device st
Page 119 and 120: Chapter 4 113 Pentacene islands are
Page 121 and 122: Chapter 4 115 For the preparation o
Page 123 and 124: Chapter 4 117 figure 3: PFTEOS:TEOS
Page 125 and 126: Chapter Chapter 4 4 119 (a): (a):
Page 127 and 128: Chapter 4 121 3.4 Device’s charac
Page 129 and 130: Chapter 4 123 mobility with the dim
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Chapter 4 125 As it can be observed
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Chapter 4 127 eq. 4 Where r
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Chapter 4 129 3.4.3 Thermal charact
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Chapter 4 131 Ea(eV) 0.50 0.45 0.40
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Chapter 4 133 I D (A) 100.0n 80.0n
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Chapter 4 135 μ (cm 2 V -1 s -1 )
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Chapter 4 137 T MN (K) 2400 2200 20
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Chapter 4 139 Such results, supply
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Chapter 4 141 References [1] O. D.
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Chapter 4 143 [26] P. Palestri, D.
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Conclusions In this PhD dissertatio
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Introduction 147 characterizing mor
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Table of acronyms and symbols Symbo
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Table of acronyms and symbols _____
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