tesi R. Miscioscia.pdf - EleA@UniSA

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70 State of the Art figure 39: output characteristics of transistor in [40] without contacts treatment figure 40: output characteristics of transistor in [40] whose contacts are treated with 4nitrobenzenethiol 2.7.1.3 Patterning methods for metallic contacts Given the particular topologies of devices, often organic materials (insulators and semiconductors), over which metallic contacts are deposited, could not resist a conventional photolithography process. Because using evaporation shadow-masks, without particular approaches, doesn’t permit precise structures, little enough and aligned with Gate contact, literature is rich of many different methods for depositing and defining metallic contacts applying innovative processes. In [41], Gold contacts Source and Drain for OTFT are deposited from liquid phase, applying a printing process. Technologically viewing, this solution is quite interesting, because it seems less expensive than vacuum deposition techniques or than lamination and, at the same time, more electrically efficient than polymeric conductors deposited from solution, like PEDOT:PSS and doped Polyaniline, which intrinsically show lower conductivity than metallic contacts [46][47]. An ink is made of a suspension of Gold nanoparticles functionalized with n-Buthanethiol (Au-C4), dimensions from 1 to 4 nm. The ink is printed on a test structure of Si/SiO2 to create Source and Drain contacts for a BC-OTFT (see figure 41). A relative low-
Chapter 2 71 thermal-budget treatment turns the solution into a compact solid film (see figure 42). figure 41: deposition process for an ink of Gold nanoparticles, as reported by Wu et al. [41]; on the right, an optical image of an OTFT fabricated using this technique.
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Università degli Studi di Salerno
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Acknowledgments It is a pleasure to
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In loving memory of my uncle, Profe
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Introduction Nowadays, it has becom
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Introduction 3 The drawbacks of org
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Introduction 5 Artificial Skin (OTF
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Introduction 7 structure has been d
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Chapter 1 Working principles An Org
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Chapter 1 11 1.1 A model for DC beh
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Chapter 1 13 hp. 4) Decoupling betw
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Chapter 1 15 figure 2: integration
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Chapter 1 17 eq. 11 − = Then, bei
Page 25 and 26: Chapter 1 19 The formula in eq. 18
Page 27 and 28: Chapter 1 21 and behaves as a resis
Page 29 and 30: Chapter 1 23 eq. 22 I DS = μ C ins
Page 31 and 32: Chapter 1 25 In eq. 27, kB is the B
Page 33 and 34: Chapter 1 27 eq. 30 · Thu
Page 35 and 36: Chapter 2 A survey on the state of
Page 37 and 38: Chapter 2 31 emphasizing the role p
Page 39 and 40: Chapter 2 33 Only after those years
Page 41 and 42: Chapter 2 35 In fact, usually the m
Page 43 and 44: Chapter 2 37 Examples of top-gate b
Page 45 and 46: Chapter 2 39 deposition process of
Page 47 and 48: Chapter 2 41 region is patterned by
Page 49 and 50: Chapter 2 43 figure 11: Non-Relief-
Page 51 and 52: Chapter 2 45 factor analysing, in p
Page 53 and 54: Chapter 2 47 In literature results,
Page 55 and 56: Chapter 2 49 It is clear that the c
Page 57 and 58: Chapter 2 51 In figure 17 the impro
Page 59 and 60: Chapter 2 53 figure 19: OFET trans-
Page 61 and 62: Chapter 2 55 figure 22: Comparison
Page 63 and 64: Chapter 2 57 channel and gate in Pe
Page 65 and 66: Chapter 2 59 figure 28: Pentacene b
Page 67 and 68: Chapter 2 61 figure 31: OTFT realiz
Page 69 and 70: Chapter 2 63 materials, the higher
Page 71 and 72: Chapter 2 65 The effect of the barr
Page 73 and 74: Chapter 2 67 figure 36: potential p
Page 75: Chapter 2 69 From table 2, it is ea
Page 79 and 80: Chapter 2 73 in particular in OLEDs
Page 81 and 82: Chapter 2 75 One interesting charac
Page 83 and 84: Chapter 2 77 figure 48: electrical
Page 85 and 86: Chapter 2 79 The research on the OE
Page 87 and 88: Chapter 2 81 photolysis). In this p
Page 89 and 90: Chapter 2 83 [26] Facchetti, Wasiel
Page 91 and 92: Chapter 3 Gate-leakages in polymeri
Page 93 and 94: Gate-leakages 87 determined by XRD
Page 95 and 96: Gate-leakages 89 The results are:
Page 97 and 98: Gate-leakages 91 It has to be consi
Page 99 and 100: Gate-leakages 93 figure 8: Output c
Page 101 and 102: Gate-leakages 95 figure 12: electri
Page 103 and 104: Gate-leakages 97 3.4 Advanced circu
Page 105 and 106: Gate-leakages 99 figure 16: SEM ima
Page 107 and 108: Gate-leakages 101 modeled with a co
Page 109 and 110: Gate-leakages 103 eq. 11 • Shadow
Page 111 and 112: Gate-leakages 105 References [1] R.
Page 113 and 114: Chapter 4 Morphology-mobility relat
Page 115 and 116: Chapter 4 109 insulators to increas
Page 117 and 118: Chapter 4 111 3.2 General device st
Page 119 and 120: Chapter 4 113 Pentacene islands are
Page 121 and 122: Chapter 4 115 For the preparation o
Page 123 and 124: Chapter 4 117 figure 3: PFTEOS:TEOS
Page 125 and 126: Chapter Chapter 4 4 119 (a): (a):
Page 127 and 128:
Chapter 4 121 3.4 Device’s charac
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Chapter 4 123 mobility with the dim
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Chapter 4 125 As it can be observed
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Chapter 4 127 eq. 4 Where r
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Chapter 4 129 3.4.3 Thermal charact
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Chapter 4 131 Ea(eV) 0.50 0.45 0.40
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Chapter 4 133 I D (A) 100.0n 80.0n
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Chapter 4 135 μ (cm 2 V -1 s -1 )
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Chapter 4 137 T MN (K) 2400 2200 20
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Chapter 4 139 Such results, supply
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Chapter 4 141 References [1] O. D.
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Chapter 4 143 [26] P. Palestri, D.
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Conclusions In this PhD dissertatio
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Introduction 147 characterizing mor
Page 155 and 156:
Table of acronyms and symbols Symbo
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Table of acronyms and symbols _____
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