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142 Exceptions in morphology-mobility relationship organic thin-film transistors”, Current Applied Physics 9 (2009) 913–918 [16] Chang Su Kim, Sung Jin Jo, Jong Bok Kim, Seung Yoon Ryu, Joo Hyon Noh, Hong Koo Baikb, Se Jong Lee, Youn Sang Kim, “Superhydrophobic modification of gate dielectrics for densely packed pentacene thin film transistors”, Appl. Phys. Lett. 91, 063503 (2007). [17] Guang Cai Yuan, Zheng Xu, Cheng Gong, Qin Jia Cai, Zhi Song Lu, Jing Sheng Shi, Fu Jun Zhang, Su Ling Zhao, Na Xu, Chang Ming Li, “High performance organic thin film transistor with phenyltrimethoxysilane-modified dielectrics”, Appl. Phys. Lett. 94, 153308 (2009). [18] Myung-Han Yoon, Antonio Facchetti, Tobin J. Marks “σ-π molecular dielectric multilayers for low-voltage organic thinfilm transistors”, PNAS vol. 102 no. 13 4678–4682 (2005), doi:10.1073/pnas.0501027102. [19] E. J. Meijer, M. Matters, P. T. Herwig, D. M. de Leeuw, T. M. Klapwijk, “The Meyer–Neldel rule in organic thin-film transistors”, Appl. Phys. Lett., Vol. 76, No. 23, 5 June 2000. [20] W. Meyer and H. Neldel, Z. Tech. Phys. Leipzig 18, 588 (1937). [21] S. Steudel, S. De Vusser, S. D. Jonge, D. Janssen, S. Verlaak, J. Genoe, and P. Heremans, “Influence of the dielectric roughness on the performance of pentacene transistors,” Appl. Phys. Lett., vol. 85, no. 19, pp. 4400–4402, Nov. 2004. [22] H.-J. Jeong, D. K. Kim, S. B. Lee, S.-H. Kwon, K. Kadono, Journal of Colloid and Interface Science, 235, 130, 2001 [23] M. Petrosino, A. Rubino, R. Miscioscia, A. De Girolamo Del Mauro, C. Minarini, IEEE Proc. of the Int. Conf. on Sign., Circ. and Syst., Djerba (Tunisia) 2009. [24] R. Miscioscia, G. Nenna, P. Tassini, A. De Girolamo Del Mauro, P. Vacca, T. Di Luccio, C. Minarini, D. Della Sala, M. Petrosino and A. Rubino, Proc. of the 5th Int. TFT Conf., Paris 2009. [25] Mario Petrosino, Riccardo Miscioscia, Anna De Girolamo Del Mauro, Carla Minarini, Alfredo Rubino “A gate leakage-free analysis of temperature and field dependent mobility in pentacene OTFTs”, P38, proc. int. conf. ICOE 2010, June 23-25, 2010.
Chapter 4 143 [26] P. Palestri, D. Esseni, G. Guegan On the extraction of the channel current in permeable gate oxide MOSFETs Solid-State Electronics 48 (2004) 609–615. [27] Pierpaolo Palestri, David Esseni, Luca Selmi, George Guegan, Enrico Sangiorgi, “A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs”, IEEE Transactions on Electron Devices, vol. 50, no. 5, May 2003. [28] Necliudov, P. V.; Shur, M. S.; Gundlach, D. J. & Jackson, T. N., Journal of Applied Physics, AIP, 2000, 88, 6594-6597. [29] Y. Yun, C. Pearson, M. C. Petty, J. Appl. Phys. 105, 034508 (2009); doi:10.1063/1.3075616. [30] M. Shur and M. Hack, J. Appl. Phys. 55, 10, 3831 (1984). [31] G. Horowitz, P. Lang, W. Kalb, M. Mottaghi, A. Roumyantseva, A. Yassar, “Organic Field-Effect Transistors with Self-Assembled Monolayers” Proc. Int. Symp. Super- Functionality Organic Devices, IPAP Conf. Series 6 pp.125-129. [32] Mujeeb Ullah, I. Fishchuk, A. Kadashchuk, P. Stadler, A. Pivrikas, C. Simbrunner, V. N. Poroshin, N. S. Sariciftci, H. Sitter, “Dependence of Meyer–Neldel energy on energetic disorder in organic field effect transistors”, Appl. Phys. Lett. 96, 213306 (2010). [33] P. Stallinga, H.L. Gomes / Organic Electronics 6 (2005) 137– 141.
Page 1 and 2:
Università degli Studi di Salerno
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Acknowledgments It is a pleasure to
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In loving memory of my uncle, Profe
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Introduction Nowadays, it has becom
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Introduction 3 The drawbacks of org
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Introduction 5 Artificial Skin (OTF
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Introduction 7 structure has been d
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Chapter 1 Working principles An Org
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Chapter 1 11 1.1 A model for DC beh
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Chapter 1 13 hp. 4) Decoupling betw
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Chapter 1 15 figure 2: integration
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Chapter 1 17 eq. 11 − = Then, bei
Page 25 and 26:
Chapter 1 19 The formula in eq. 18
Page 27 and 28:
Chapter 1 21 and behaves as a resis
Page 29 and 30:
Chapter 1 23 eq. 22 I DS = μ C ins
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Chapter 1 25 In eq. 27, kB is the B
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Chapter 1 27 eq. 30 · Thu
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Chapter 2 A survey on the state of
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Chapter 2 31 emphasizing the role p
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Chapter 2 33 Only after those years
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Chapter 2 35 In fact, usually the m
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Chapter 2 37 Examples of top-gate b
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Chapter 2 39 deposition process of
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Chapter 2 41 region is patterned by
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Chapter 2 43 figure 11: Non-Relief-
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Chapter 2 45 factor analysing, in p
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Chapter 2 47 In literature results,
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Chapter 2 49 It is clear that the c
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Chapter 2 51 In figure 17 the impro
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Chapter 2 53 figure 19: OFET trans-
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Chapter 2 55 figure 22: Comparison
Page 63 and 64:
Chapter 2 57 channel and gate in Pe
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Chapter 2 59 figure 28: Pentacene b
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Chapter 2 61 figure 31: OTFT realiz
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Chapter 2 63 materials, the higher
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Chapter 2 65 The effect of the barr
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Chapter 2 67 figure 36: potential p
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Chapter 2 69 From table 2, it is ea
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Chapter 2 71 thermal-budget treatme
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Chapter 2 73 in particular in OLEDs
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Chapter 2 75 One interesting charac
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Chapter 2 77 figure 48: electrical
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Chapter 2 79 The research on the OE
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Chapter 2 81 photolysis). In this p
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Chapter 2 83 [26] Facchetti, Wasiel
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Chapter 3 Gate-leakages in polymeri
Page 93 and 94:
Gate-leakages 87 determined by XRD
Page 95 and 96:
Gate-leakages 89 The results are:
Page 97 and 98: Gate-leakages 91 It has to be consi
Page 99 and 100: Gate-leakages 93 figure 8: Output c
Page 101 and 102: Gate-leakages 95 figure 12: electri
Page 103 and 104: Gate-leakages 97 3.4 Advanced circu
Page 105 and 106: Gate-leakages 99 figure 16: SEM ima
Page 107 and 108: Gate-leakages 101 modeled with a co
Page 109 and 110: Gate-leakages 103 eq. 11 • Shadow
Page 111 and 112: Gate-leakages 105 References [1] R.
Page 113 and 114: Chapter 4 Morphology-mobility relat
Page 115 and 116: Chapter 4 109 insulators to increas
Page 117 and 118: Chapter 4 111 3.2 General device st
Page 119 and 120: Chapter 4 113 Pentacene islands are
Page 121 and 122: Chapter 4 115 For the preparation o
Page 123 and 124: Chapter 4 117 figure 3: PFTEOS:TEOS
Page 125 and 126: Chapter Chapter 4 4 119 (a): (a):
Page 127 and 128: Chapter 4 121 3.4 Device’s charac
Page 129 and 130: Chapter 4 123 mobility with the dim
Page 131 and 132: Chapter 4 125 As it can be observed
Page 133 and 134: Chapter 4 127 eq. 4 Where r
Page 135 and 136: Chapter 4 129 3.4.3 Thermal charact
Page 137 and 138: Chapter 4 131 Ea(eV) 0.50 0.45 0.40
Page 139 and 140: Chapter 4 133 I D (A) 100.0n 80.0n
Page 141 and 142: Chapter 4 135 μ (cm 2 V -1 s -1 )
Page 143 and 144: Chapter 4 137 T MN (K) 2400 2200 20
Page 145 and 146: Chapter 4 139 Such results, supply
Page 147: Chapter 4 141 References [1] O. D.
Page 151 and 152: Conclusions In this PhD dissertatio
Page 153 and 154: Introduction 147 characterizing mor
Page 155 and 156: Table of acronyms and symbols Symbo
Page 157: Table of acronyms and symbols _____
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